Browsing by Author "Maes, Jan Willem"
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Publication Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Meeting abstract2014-10, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6, 5/10/2014, p.1855Publication Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes
Journal article2009, Journal of Applied Physics, (106) 9, p.94101Publication Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
Journal article2007, IEEE Trans. Electron Devices, (54) 10, p.2378-2748Publication Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
; ; ; ; ; Publication Growth and layer characterization of SrTiO3 by atomic layer deposition using Sr(tBu3Cp)2 and Ti(OMe)4
Proceedings paper2009, CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications, 13/04/2009, p.1155-C08-03Publication Impact of precursors in the atomic layer deposition of high-k dielectrics on semiconductor substrates
Meeting abstract2008, China Semiconductor Material International Conference - CSMIC, 19/03/2008, p.139-141Publication New mechanisms for ozone-based ALD growth of high-k dielectrics via nitrogen-oxygen species
Proceedings paper2010, Atomic Layer Deposition Applications 6, 10/10/2010, p.91-99Publication Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
Journal article2021, MATERIALS ADVANCES, (2) 5, p.1635-1643Publication Scatterometry and AFM measurement combination for area selective deposition process characterization
Proceedings paper2019, Metrology, Inspection, and Process Control for Microlithography XXXIII, 24/02/2019, p.109591N