Browsing by Author "Maes, Jos"
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Publication Alternative gate insulator materials for future generation MOSFETs
Oral presentation2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.Publication Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133Publication Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.83-87Publication Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Gate stack preparation with high-k materials in a cluster tool
Proceedings paper2001, Proceedings of the IEEE International Symposium on Semiconductor Manufacturing - ISSM, 8/10/2001, p.395-398Publication In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
Meeting abstract2002, 201st Meeting of the Electrochemical Society. Rapid Thermal and Other Short Time Processing Technologies III, 12/05/2002, p.719Publication Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator - IWGI, 1/11/2001, p.226-229Publication Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Oral presentation2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference onPublication Physical characterization of high-k gate stacks deposited on HF-last surfaces
Proceedings paper2001, Ectended Abstracts of the International Workshop on Gate Insulator. IWGI 2001, 1/11/2001, p.86-92Publication Stabilization of amorphous structures in ALCVD high-k oxide layers
Oral presentation2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference onPublication Structural characterization of ALCVD ZrO2/Al2O3 nano-laminate deposits with high temperature grazing incidence XRD and TEM
; ; ; Oral presentation2002, E-MRS Spring Meeting Symposium E: Advanced Characterisation of Semiconductor Materials and DevicesPublication The effect of Pb stoichiometry on switching behavior of Pt/PZT/Pt ferroelectric capacitors