imec Institutional Repository Browsing {{ collection }} by Author "Mantl, S."

Publication

Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers

Buca, D.

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Hollander, B.

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Feste, S.

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Lenk, S.

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Trinkaus, H.

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Mantl, S.

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Loo, Roger

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Caymax, Matty

Journal article

2007-01, Applied Physics Letters, (90) 3, p.32108

Publication

Charge pumping and mobility measurements on strained SOI MOSFETs

Schmidt, M.

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Gottlob, H. D. B.

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Echermeyer, T.

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Wahlbrink, T.

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Mollenhauer, T.

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Baus, M.

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Buca, D.M.

Proceedings paper

2007, 8th European Workshop on ULtimate Integration of Silicon - ULIS, 14/03/2007

Publication

Dislocation nucleation and movement in helium implanted SiGe/Si(001)Heterostructures studied by in-situ TEM

Hueging, N.

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Luysberg, M.

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Urban, K.

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Buca, D.

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Holländer, B.

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Mantl, S.

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Morschbacher, M.

Oral presentation

2004, Dislocation Meeting

Publication

Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer

Buca, D.

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Goryll, M.

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Hollaender, B.

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Trinkaus, H.

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Mantl, S.

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Loo, Roger

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Nguyen, Duy

Oral presentation

2007, MRS 2007 Spring Meeting Symposium F: Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II

Publication

Fabrication and characterization of strained Si-on-insulator (sSOI)

Zhao, Q.T.

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Buca, D.

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Feste, S.

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Goryll, M.

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Loo, Roger

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Reiche, M.

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Mantl, S.

Proceedings paper

2007, 8th European Workshop on ULtimate Integration of Silicon - ULIS, 14/03/2007

Publication

Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

Driussi, F.

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Esseni, D.

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Selmi, L.

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Schmidt, M.

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Lemme, M.

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Kurz, H.

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Buca, D.

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Mantl, S.

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Luysberg, M.

Proceedings paper

2007, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007, p.315-318

Publication

Formation of ternary Ni-silicide on relaxed and strained SiGe layers

Zhao, Q.T.

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Buca, D.

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Lenk, S.

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Loo, Roger

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Caymax, Matty

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Mantl, S.

Journal article

2004, Microelectronic Engineering, (76) 1_4, p.285-289

Publication

Growth of strained Si on He ion implanted Si/SiGe heterostructures

Buca, D.

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Feste, S.

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Hollander, B.

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Mantl, S.

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Loo, Roger

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Caymax, Matty

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Carius, R.

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Schaefer, H.

Proceedings paper

2005-04, 6th European Conference on Integration in Silicon - ULIS, 7/04/2005, p.11-14

Publication

He implantation induced relaxation of SiGe/Si: nucleation of dislocations and coarsening of He bubbles

Luysberg, M.

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Hueging, N.

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Urban, K.

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Buca, D.

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Holländer, B.

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Mantl, S.

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Morschbacher, M.

Proceedings paper

2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 17/05/2004, p.117-118

Publication

Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

Buca, D.

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Trinkaus, H.

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Holländer, B.

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Loo, Roger

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Nguyen, Duy

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Mantl, S.

Proceedings paper

2008, 4th International SiGe Technology and Device Meeting, 11/05/2008, p.40-41

Publication

In-situ TEM on He implantation induced defects in SiGe/Si

Luysberg, Martina

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Hueging, N.

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Urban, K.

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Buca, D.

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Holländer, B.

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Mantl, S.

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Morschbacher, M.

Proceedings paper

2004, Proceedings of the 13th European Microscopy Congress. Volume 2: Materials Sciences, 22/08/2004, p.377-378

Publication

Large current enhancement in n-MOSFETs with strained Si on insulator

Mantl, S.

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Buca, D.

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Zhao, Q.T.

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Hollaender, B.

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Feste, S.

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Luysberg, M.

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Reiche, M.

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Gösele, U.

Proceedings paper

2007, International Semiconductor Device Research Symposium - ISDRS, 12/12/2007

Publication

Microstructure evolution effects of helium redistribution in as-implanted silicon and Si0.8Ge0.2/Si heterostructures

Morschbacher, M.J.

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da Silva, D.L.

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Fichtner, P.F.P.

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Oliviero, E.

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Behar, M.

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Zawislak, F.C.

Journal article

2004, Nuclear Instruments & Methods in Physics Research B, 219-220, p.703-707

Publication

Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer

Chen, Peng

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Chu, Paul K.

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Höchbauer, T.

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Nastasi, M.

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Buca, D.

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Mantl, S.

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Theodore, N. David

Journal article

2004, Applied Physics Letters, (85) 21, p.4944-4946

Publication

Preparation and characterization of rare earth scandates as alternative gate oxide materials

Wagner, M.

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Heeg, T.

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Schubert, J.

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Zhao, Chao

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Richard, Olivier

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Caymax, Matty

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Afanasiev, Valeri

Proceedings paper

2005, 6th European Conference on Ultimate Integration of Silicon - ULIS, 7/04/2005

Publication

Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

Kluth, S.M.

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Alvarez, C.

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Trellenkamp, St.

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Moers, J.

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Mantl, S.

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Kretz, J.

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Vandervorst, Wilfried

Journal article

2005, Journal of Vacuum Science & Technology B, (23) 1, p.76-79

Publication

Strain relaxation of pseudomorphic Si1-xGe/Si(100) heterostructures after Si+ ion implantation

Holländer, B.

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Buca, D.

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Mörschbächer, M.

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Lenk, St.

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Mantl, S.

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Herzog, H.J.

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Hackbarth, Th.

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Loo, Roger

Journal article

2004, Journal of Applied Physics, (96) 3, p.1745-1747

Publication

Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation

Holländer, B.

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Buca, D.M.

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Lenk, S.

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Mantl, S.

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Herzog, H.J.

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Hackbarth, T.

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Loo, Roger

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Caymax, Matty

Oral presentation

2004, 14th International Conference on Ion Beam Modification of Materials - IBMM

Publication

Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing

Mantl, S.

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Holländer, B.

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Hüging, N.

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Luysberg, M.

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Lenk, St.

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Hogg, S.M.

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Herzog, H.-J.

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Hackbarth, T.

Oral presentation

2003, 12th EURO-CVD Workshop

Publication

Strained Si on relaxed SiGe made by ion implantation and strain transfer

Mantl, S.

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Buca, D.

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Holländer, B.

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Mörschbächer, M.

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Trinkhaus, H.

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Luysberg, M.

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Hueging, N.

Proceedings paper

2004-10, SiGE: Materials, Processing, and Devices, 3/10/2004, p.731-740

Browsing by Author "Mantl, S."