Browsing by Author "Martin-Martinez, Javier"
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Publication A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs
;Wu, Qian ;Bayerl, A. ;Porti, Marc ;Martin-Martinez, Javier ;Lanza, MarioRodiguez, RosannaJournal article2014, IEEE Transactions on Electron Devices, (61) 9, p.3118-3124Publication An equivalent circuit model for the recovery component of BTI
Proceedings paper2008-09, 38th European Solid-State Device Research Conference - ESSDERC, 15/09/2008, p.55-58Publication Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
Proceedings paper2023, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023Publication Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale
;Bayerl, A. ;Porti, Marc ;Martin-Martinez, Javier ;Lanza, M. ;Rodriguez, RosannaVelayudhan, V.Proceedings paper2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.5D4.1-5D4.6Publication Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach
;Wu, Qian ;Porti, Marc ;Bayerl, Albin ;Martin-Martinez, JavierRodriguez, RosanaJournal article2015, Journal of Vacuum Science and Technology B, (33) 2, p.22202Publication Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators
Journal article2012, IEEE Transactions on Device and Materials Reliability, (12) 1, p.78-85Publication Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents
Proceedings paper2009-02, Spanish Conference on Electron Devices - CDE, 11/02/2009, p.156-159Publication NBTI from the perspective of defect states with widely distributed time scales
Proceedings paper2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.55-60Publication Negative bias temperature instability in devices with millisecond annealed ultra-shallow junctions
;Moras, Miquel ;Martin-Martinez, Javier ;Rodriguez, Rosanna ;Nafria, MontseAymerich, XavierProceedings paper2013, International Semiconductor Device Research Symposium - ISDRS, 11/12/2013Publication Probabilistic defect occupancy model for NBTI
Proceedings paper2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.920-925Publication Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions
;Saraza-Canflanca, Pablo ;Rodriguez, Rosana ;Martin-Martinez, JavierCastro-Lopez, RafaelJournal article2021, SOLID-STATE ELECTRONICS, 185Publication Stochastic piecewise modeling of post-BD gate current oriented to circuit design
Oral presentation2008, ESSDERC Fringe Poster SessionPublication Ubiquitous relaxation in BTI stressing - new evaluation and insights
Proceedings paper2008-04, Proceedings of the IEEE International Reliability Physics Symposium - IRPS, 27/04/2008, p.20-27