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Browsing by Author "Martin-Martinez, Javier"

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    A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs

    Wu, Qian
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    Bayerl, A.
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    Porti, Marc
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    Martin-Martinez, Javier
    ;
    Lanza, Mario
    ;
    Rodiguez, Rosanna
    Journal article
    2014, IEEE Transactions on Electron Devices, (61) 9, p.3118-3124
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    An equivalent circuit model for the recovery component of BTI

    Martin-Martinez, Javier
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    Rodriguez, Rosana
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    Nafria, Montserat
    ;
    Aymerich, X.
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    Kaczer, Ben  
    Proceedings paper
    2008-09, 38th European Solid-State Device Research Conference - ESSDERC, 15/09/2008, p.55-58
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    Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability

    Martin-Martinez, Javier
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    Diaz Fortuny, Javier  
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    Saraza Canflanca, Pablo  
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    Rodriguez, Rosana
    Proceedings paper
    2023, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023
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    Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale

    Bayerl, A.
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    Porti, Marc
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    Martin-Martinez, Javier
    ;
    Lanza, M.
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    Rodriguez, Rosanna
    ;
    Velayudhan, V.
    Proceedings paper
    2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.5D4.1-5D4.6
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    Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach

    Wu, Qian
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    Porti, Marc
    ;
    Bayerl, Albin
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    Martin-Martinez, Javier
    ;
    Rodriguez, Rosana
    Journal article
    2015, Journal of Vacuum Science and Technology B, (33) 2, p.22202
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    Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators

    Martin-Martinez, Javier
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    Kaczer, Ben  
    ;
    Degraeve, Robin  
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    Roussel, Philippe  
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    Rodriguez, Rosana
    Journal article
    2012, IEEE Transactions on Device and Materials Reliability, (12) 1, p.78-85
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    Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents

    Martin-Martinez, Javier
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    Kaczer, Ben  
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    Boix, J.
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    Ayala, N.
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    Rodriguez, Rosana
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    Nafria, Montserrat
    Proceedings paper
    2009-02, Spanish Conference on Electron Devices - CDE, 11/02/2009, p.156-159
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    NBTI from the perspective of defect states with widely distributed time scales

    Kaczer, Ben  
    ;
    Grasser, Tibor
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    Martin-Martinez, Javier
    ;
    Simoen, Eddy  
    ;
    Aoulaiche, Marc
    Proceedings paper
    2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.55-60
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    Negative bias temperature instability in devices with millisecond annealed ultra-shallow junctions

    Moras, Miquel
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    Martin-Martinez, Javier
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    Rodriguez, Rosanna
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    Nafria, Montse
    ;
    Aymerich, Xavier
    Proceedings paper
    2013, International Semiconductor Device Research Symposium - ISDRS, 11/12/2013
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    Probabilistic defect occupancy model for NBTI

    Martin-Martinez, Javier
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    Kaczer, Ben  
    ;
    Toledano Luque, Maria
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    Rodriguez, Rosana
    Proceedings paper
    2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.920-925
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    Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions

    Saraza-Canflanca, Pablo
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    Rodriguez, Rosana
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    Martin-Martinez, Javier
    ;
    Castro-Lopez, Rafael
    Journal article
    2021, SOLID-STATE ELECTRONICS, 185
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    Stochastic piecewise modeling of post-BD gate current oriented to circuit design

    Martin-Martinez, Javier
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    Kaczer, Ben  
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    Ayala, N
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    Rodriguez, Rosana
    ;
    Nafria, Montserrat
    Oral presentation
    2008, ESSDERC Fringe Poster Session
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    Ubiquitous relaxation in BTI stressing - new evaluation and insights

    Kaczer, Ben  
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    Grasser, Tibor
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    Roussel, Philippe  
    ;
    Martin-Martinez, Javier
    ;
    O'Connor, Robert
    Proceedings paper
    2008-04, Proceedings of the IEEE International Reliability Physics Symposium - IRPS, 27/04/2008, p.20-27

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