Browsing by Author "McMitchell, Sean"
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Publication A comprehensive variability study of doped HfO2 FeFET for memory applications
Proceedings paper2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.85-88Publication Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si
Journal article2025, ADVANCED ELECTRONIC MATERIALS, (11) 4, p.Art. 2400440Publication Advanced characterization methods for HfO2/ZrO2-based ferroelectrics
Editorial material2023, 5, p.Art. 1114267Publication Defect profiling in FEFET Si:HfO2 layers
Journal article2020, Applied Physics Letters, (117) 20, p.203504Publication Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification
; ; ; ; Journal article2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 9, p.5345-5350Publication Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
Journal article2021, APPLIED PHYSICS LETTERS, (118) 9, p.092902Publication Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices
Proceedings paper2020, 2020 IEEE International Memory Workshop (IMW), 17/05/2020Publication Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride
Journal article2023, ACS APPLIED ELECTRONIC MATERIALS, (5) 2, p.858-864Publication Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance
Proceedings paper2021, 26th Silicon Nanoelectronics Workshop, JUN 13, 2021, p.21-22Publication Ferroelectric La-Doped ZrO2/HfxZr1-xO2 Bilayer Stacks with Enhanced Endurance
Journal article2021, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, (15) 5, p.2100033Publication Ferroelectricity in Si-doped hafnia: probing challenges in absence of screening charges
Journal article2020, Nanomaterials, (10) 8, p.1576Publication First demonstration of ferroelectric Si:Hf0(2) based 3D FE-FET with trench architecture for dense non-volatile memory application
; ; ; ; ; Proceedings paper2021, IEEE International Memory Workshop (IMW), MAY 16-19, 2021, p.32-35Publication First-principles perspective on poling mechanisms and ferroelectric/ antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications
Proceedings paper2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.380-383Publication Impact of Cationic Stoichiometry on Physical, Optical and Electrical Properties of SrTiO3 Thin Films Grown on (001)-Oriented Si Substrates
Journal article2024, MATERIALS, (17) 8, p.Art. 1714Publication Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO2-Based Ferroelectric FET
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 9, p.4391-4396Publication Impact of charge trapping on imprint and its recovery in HfO2 based FeFET
Proceedings paper2019, 2019 IEEE International Electron Devices Meeting (IEDM), 7/12/2019, p.358-361Publication Impact of mechanical strain on wakeup of HfO2 ferroelectric memory
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication Investigation of imprint in FE-HfO2 and its recovery
; ; ; ; ; Journal article2020, IEEE Transactions on Electron Devices, (67) 11, p.4911-4917Publication Microwave Properties of Ba-Substituted Pb(Zr0.52Ti0.48)O3 after Chemical Mechanical Polishing
Journal article2023, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, (12) 9, p.094006Publication New insights into the imprint effect in FE-HfO and its recovery
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-7