Browsing by Author "Moens, Peter"
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Publication A new substrate current free nLIGBT for junction isolated technologies
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.461-464Publication An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Proceedings paper2018, 30th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 13/05/2018, p.284-287Publication Analysis and application of energy capability characterization methods in power MOSFETs
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.453-456Publication Characterization of dynamic SOA of power MOSFETs limited by electrothermal breakdown
Proceedings paper2005-09, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 12/09/2005, p.465-468Publication Charge trapping effects and interface state generation in a 40V lateral resurf pDMOS transistor
Proceedings paper2005-09, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 12/09/2005, p.407-410Publication Comprehensive study of postprocessed copper heat sinks on smart power drivers for thermal SOA improvement
Proceedings paper2005-04, Proceedings International Reliability Physics Symposium, 17/04/2005, p.652-653Publication Design and characterization of a post-processed copper heat sink for smart power drivers
Proceedings paper2005-04, IEEE International Conference on Microelectronic Test Structures, 4/04/2005, p.27-31Publication Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Journal article2018, IEEE Transactions on Electron Devices, (65) 12, p.5365-5372Publication Hot carrier degradation phenomena in lateral and vertical DMOS transistors
Journal article2004-04, IEEE Trans. Electron Devices, (51) 4, p.623-628Publication Hot hole degradation effects in lateral nDMOS transistors
Journal article2004-10, IEEE Trans. Electron Devices, (2004) 51, p.1704-1710Publication Reliability challenges in integrated high voltage devices
Oral presentation2005, International Reliability Physics Symposium (IRPS)Publication Reliability sssessment of integrated power transistors: lateral DMOS versus vertical DMOS
Journal article2008, Microelectronics Reliability, (48) 8_9, p.1300-13005Publication Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
Publication Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron
Proceedings paper2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.130-133Publication Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
Proceedings paper2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 19/05/2019, p.287-289