Browsing by Author "Myronov, M."
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Publication Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs
Journal article2011, IEEE Electron Device Letters, (32) 1, p.87-89Publication High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
; ; ; Publication High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
; ; ; Publication Low-frequency noise characterizations of strained germanium pMOSFETs
; ; ; ; Publication Low-frequency noise in strained and relaxed Ge pMOSFETs
Proceedings paper2010, International Conference on Solid-State and Integrated Circuit Technology, 1/11/2010Publication TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology
Publication TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology