Browsing by Author "Noda, Taiji"
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Publication Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.955-958Publication Analysis of dopant diffusion and defects in fin structure using an atoministic kinetic Monte Carlo approach
Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.140-143Publication Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.30.2Publication Atomistic modeling of pocket dopant deactivation and its impact on Vth variation in scaled Si planar devices using an atomistic kinetic Monte Carlo approach
Journal article2015, IEEE Transactions on Electron Devices, (62) 6, p.1789-1795Publication Junction strategies for 1x nm technology node with FINFET and high mobility channel
Proceedings paper2012, 12th International Workshop on Junction Technology - IWJT, 14/05/2012, p.216-221Publication Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe
; ;Noda, Taiji; ; ; Proceedings paper2013, International Workshop on Junction Technology - IWJT, 6/06/2013Publication Laser annealed junctions: pocket profile analysis using an atomistic kinetic Monte Carlo approach
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.73-74Publication Laser annealed junctions: process integration sequence optimization for advanced CMOS technologies
Proceedings paper2007, Extended Abstracts of the 7th International Workshop on Junction Technology, 8/06/2007, p.137-140Publication Laser-annealed junctions with advanced CMOS gate stacks for 32nm node: perspectives on device performance and manufacturability
Proceedings paper2008, Symposium on VLSI Technology. Digest of Technical Papers, 17/06/2008, p.186-187Publication Ultra-shallow junctions formed by C co-implantation with spkie plus sub-melt laser annealing
Journal article2008, Journal of Vacuum Science and Technology B, (26) 1, p.281-285