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Browsing by Author "Noda, Taiji"

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    Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

    Noda, Taiji
    ;
    Vandervorst, Wilfried  
    ;
    Felch, S.
    ;
    Parihar, V.
    ;
    Cuperus, Aldert
    ;
    Mcintosh, R.
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.955-958
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    Analysis of dopant diffusion and defects in fin structure using an atoministic kinetic Monte Carlo approach

    Noda, Taiji
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    Kambham, Ajay
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    Vrancken, Christa  
    ;
    Thean, Aaron  
    ;
    Horiguchi, Naoto  
    Proceedings paper
    2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.140-143
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    Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach

    Noda, Taiji
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    Mitard, Jerome  
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    Witters, Liesbeth  
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    Hellings, Geert  
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    Vrancken, Christa  
    Proceedings paper
    2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.30.2
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    Atomistic modeling of pocket dopant deactivation and its impact on Vth variation in scaled Si planar devices using an atomistic kinetic Monte Carlo approach

    Noda, Taiji
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    Vrancken, Christa  
    ;
    Vandervorst, Wilfried  
    ;
    Horiguchi, Naoto  
    Journal article
    2015, IEEE Transactions on Electron Devices, (62) 6, p.1789-1795
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    Junction strategies for 1x nm technology node with FINFET and high mobility channel

    Horiguchi, Naoto  
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    Zschaetzsch, Gerd
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    Sasaki, Yuichiro
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    Kambham, Ajay Kumar
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    Douhard, Bastien  
    Proceedings paper
    2012, 12th International Workshop on Junction Technology - IWJT, 14/05/2012, p.216-221
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    Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe

    Horiguchi, Naoto  
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    Noda, Taiji
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    Witters, Liesbeth  
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    Mitard, Jerome  
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    Rosseel, Erik  
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    Hellings, Geert  
    Proceedings paper
    2013, International Workshop on Junction Technology - IWJT, 6/06/2013
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    Laser annealed junctions: pocket profile analysis using an atomistic kinetic Monte Carlo approach

    Noda, Taiji
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    Ortolland, Claude
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    Vandervorst, Wilfried  
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    Vrancken, Christa  
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    Rosseel, Erik  
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.73-74
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    Laser annealed junctions: process integration sequence optimization for advanced CMOS technologies

    Hoffmann, Thomas Y.
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    Noda, Taiji
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    Felch, S.
    ;
    Severi, Simone  
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    Parihar, V.
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    Forstner, H.
    Proceedings paper
    2007, Extended Abstracts of the 7th International Workshop on Junction Technology, 8/06/2007, p.137-140
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    Laser-annealed junctions with advanced CMOS gate stacks for 32nm node: perspectives on device performance and manufacturability

    Ortolland, Claude
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    Noda, Taiji
    ;
    Chiarella, Thomas  
    ;
    Kubicek, Stefan  
    ;
    Kerner, Christoph  
    Proceedings paper
    2008, Symposium on VLSI Technology. Digest of Technical Papers, 17/06/2008, p.186-187
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    Ultra-shallow junctions formed by C co-implantation with spkie plus sub-melt laser annealing

    Felch, S.B.
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    Collart, E.
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    Parihar, V.
    ;
    Thirupapulyur, S.
    ;
    Schreutelkamp, R.
    ;
    Pawlak, Bartek  
    Journal article
    2008, Journal of Vacuum Science and Technology B, (26) 1, p.281-285

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