Browsing by Author "O'Connor, Robert"
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Publication A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538Publication Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping
Journal article2008, Applied Physics Letters, (93) 5, p.53506Publication Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
Proceedings paper2008, IEEE International Reliability Physics Symposium Proceedings, 27/04/2008, p.671-672Publication Area-Selective Deposition of AlOx and Al-Silicate for Fully Self- Aligned Via Integration
Journal article2023, ACS APPLIED MATERIALS & INTERFACES, (15) 4, p.6079-6091Publication Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing
Journal article2005, Microelectronic Engineering, (77) 3_4, p.302-309Publication Electron energy dependence of defect generation in high-k gate stacks
Journal article2008, Journal of Applied Physics, (103) 6, p.64503Publication Electron energy dependence of defect generation in high-k gate stacks
Oral presentation2007, 38th IEEE Semiconductor Interface Specialists ConferencePublication Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures
; ; ;O'Connor, Robert; ;Zahid, MohammedProceedings paper2009, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.493-498Publication Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT~1nm) SiON films
Proceedings paper2004-12, Technical Digest International Electron Devices Meeting - IEDM, 12/12/2004, p.713-716Publication Low voltage stress-induced leakage current in 1.4 - 2.1 nm SiON and HfSiON gate dielectric layers
Journal article2005-08, Semiconductor Science and Technology, 20, p.668-672Publication Methodologies for sub-1nm EOT TDDB evaluatiion
Proceedings paper2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.7-16Publication Nucleation and adhesion of ultra-thin copper films on amino-terminated self-assembled monolayers
Journal article2018, Applied Surface Science, 462, p.38-47Publication On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers
Journal article2018, Applied Surface Science, (427) A, p.260-266Publication Oxygen-vacancy-induced Vt shift in La-containing devices
Proceedings paper2007, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 19/09/2007, p.372-373Publication Reliability of HfSiON gate dielectrics
Journal article2005, Semiconductor Science and Technology, 20, p.68-71Publication Reliability of thin ZrO2 gate dielectric layers
Journal article2011, Microelectronics Reliability, (51) 6, p.1118-1122Publication SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection
Proceedings paper2008, IEEE International Reliability Physics Symposium Proceedings - IRPS, 27/04/2008, p.324-329Publication Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.801-804Publication Stress induced defect generation implications of doping HfO2 with Al
Journal article2013, Microelectronic Engineering, 109, p.54-56Publication Stress induced defect generation implications of doping HfO2 with Al
Meeting abstract2013, 18th Conference of Insulting Films on Semiconductors - INFOS: Book of Abstracts, 25/06/2013, p.258-259