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Browsing by Author "O'Connor, Robert"

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    A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

    Chang, Vincent
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    Ragnarsson, Lars-Ake  
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    Pourtois, Geoffrey  
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    O'Connor, Robert
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    Adelmann, Christoph  
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538
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    Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping

    O'Connor, Robert
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    Chang, Vincent
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    Pantisano, Luigi
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    Ragnarsson, Lars-Ake  
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    Aoulaiche, Marc
    Journal article
    2008, Applied Physics Letters, (93) 5, p.53506
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    Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping

    O'Connor, Robert
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    Chang, Vincent
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    Pantisano, Luigi
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    Ragnarsson, Lars-Ake  
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    Aoulaiche, Marc
    Proceedings paper
    2008, IEEE International Reliability Physics Symposium Proceedings, 27/04/2008, p.671-672
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    Area-Selective Deposition of AlOx and Al-Silicate for Fully Self- Aligned Via Integration

    Pasquali, Mattia  
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    Brady-Boyd, Anita  
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    Lesniewska, Alicja  
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    Carolan, Patrick  
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    Conard, Thierry  
    Journal article
    2023, ACS APPLIED MATERIALS & INTERFACES, (15) 4, p.6079-6091
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    Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing

    O'Connor, Robert
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    Hughes, Greg
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    Degraeve, Robin  
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    Kaczer, Ben  
    Journal article
    2005, Microelectronic Engineering, (77) 3_4, p.302-309
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    Electron energy dependence of defect generation in high-k gate stacks

    O'Connor, Robert
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    Pantisano, Luigi
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    Degraeve, Robin  
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    Kauerauf, Thomas
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    Kaczer, Ben  
    Journal article
    2008, Journal of Applied Physics, (103) 6, p.64503
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    Electron energy dependence of defect generation in high-k gate stacks

    O'Connor, Robert
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    Pantisano, Luigi
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    Degraeve, Robin  
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    Kauerauf, Thomas
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    Kaczer, Ben  
    Oral presentation
    2007, 38th IEEE Semiconductor Interface Specialists Conference
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    Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures

    Sahhaf, Sahar  
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    Degraeve, Robin  
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    O'Connor, Robert
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    Kaczer, Ben  
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    Zahid, Mohammed
    ;
    Roussel, Philippe  
    Proceedings paper
    2009, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.493-498
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    Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT~1nm) SiON films

    Kaczer, Ben  
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    Degraeve, Robin  
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    O'Connor, Robert
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    Roussel, Philippe  
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    Groeseneken, Guido  
    Proceedings paper
    2004-12, Technical Digest International Electron Devices Meeting - IEDM, 12/12/2004, p.713-716
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    Low voltage stress-induced leakage current in 1.4 - 2.1 nm SiON and HfSiON gate dielectric layers

    O'Connor, Robert
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    McDonnell, Stephen
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    Hughes, Greg
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    Degraeve, Robin  
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    Kauerauf, Thomas
    Journal article
    2005-08, Semiconductor Science and Technology, 20, p.668-672
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    Methodologies for sub-1nm EOT TDDB evaluatiion

    Kauerauf, Thomas
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    Degraeve, Robin  
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    Ragnarsson, Lars-Ake  
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    Roussel, Philippe  
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    Sahhaf, Sahar  
    Proceedings paper
    2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.7-16
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    Nucleation and adhesion of ultra-thin copper films on amino-terminated self-assembled monolayers

    Bogan, Justin
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    Brady-Boyd, Anita  
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    Armini, Silvia  
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    Lundy, R.
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    Selvaraju, V.
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    O'Connor, Robert
    Journal article
    2018, Applied Surface Science, 462, p.38-47
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    On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers

    Bodgan, Justin
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    Brady-Boyd, Anita  
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    O'Connor, Robert
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    Armini, Silvia  
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    Selvaraju, Venkateswaran
    Journal article
    2018, Applied Surface Science, (427) A, p.260-266
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    Oxygen-vacancy-induced Vt shift in La-containing devices

    O'Sullivan, Barry  
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    Mitsuhashi, Riichirou
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    Pourtois, Geoffrey  
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    Chang, Vincent
    Proceedings paper
    2007, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 19/09/2007, p.372-373
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    Reliability of HfSiON gate dielectrics

    O'Connor, Robert
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    Hughes, Greg
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    Degraeve, Robin  
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    Kaczer, Ben  
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    Kauerauf, Thomas
    Journal article
    2005, Semiconductor Science and Technology, 20, p.68-71
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    Reliability of thin ZrO2 gate dielectric layers

    O'Connor, Robert
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    Hughes, Greg
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    Kauerauf, Thomas
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    Ragnarsson, Lars-Ake  
    Journal article
    2011, Microelectronics Reliability, (51) 6, p.1118-1122
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    SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection

    O'Connor, Robert
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    Pantisano, Luigi
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    Degraeve, Robin  
    ;
    Kauerauf, Thomas
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    Kaczer, Ben  
    Proceedings paper
    2008, IEEE International Reliability Physics Symposium Proceedings - IRPS, 27/04/2008, p.324-329
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    Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability

    Grasser, T.
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    Kaczer, Ben  
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    Hehenberger, P.
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    Gös, W.
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    O'Connor, Robert
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    Reisinger, H.
    ;
    Gustin, W.
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.801-804
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    Stress induced defect generation implications of doping HfO2 with Al

    O'Connor, Robert
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    Kauerauf, Thomas
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    Arimura, Hiroaki  
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    Ragnarsson, Lars-Ake  
    Journal article
    2013, Microelectronic Engineering, 109, p.54-56
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    Stress induced defect generation implications of doping HfO2 with Al

    O'Connor, Robert
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    Kauerauf, Thomas
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    Arimura, Hiroaki  
    ;
    Ragnarsson, Lars-Ake  
    Meeting abstract
    2013, 18th Conference of Insulting Films on Semiconductors - INFOS: Book of Abstracts, 25/06/2013, p.258-259
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