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Browsing by Author "Ortolland, Claude"

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    Advanced 2D/3D simulations for laser annealed device using an atomic kinetic monte carlo approach and scanning spreading resistance microscopy (SRRM)

    Noda, T.
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    Eyben, Pierre  
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    Vandervorst, Wilfried  
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    Vrancken, Christa  
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    Rosseel, Erik  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.539-542
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    Advanced USJ for high-k / metal gate CMOS devices

    Absil, Philippe  
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    Ortolland, Claude
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    Aoulaiche, Marc
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    Rosseel, Erik  
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    Verheyen, Peter  
    Meeting abstract
    2008, MRS Spring Meeting Symposium E: Doping Engineering for Front-End Processing, 24/03/2008, p.E4.7
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    Analysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach

    Noda, Taichi
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    Vandervorst, Wilfried  
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    Vrancken, Christa  
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    Ortolland, Claude
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    Rosseel, Erik  
    Proceedings paper
    2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.383-386
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    Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

    Chiarella, Thomas  
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    Witters, Liesbeth  
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    Mercha, Abdelkarim  
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    Kerner, Christoph  
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    Rakowski, Michal  
    Journal article
    2010, Solid-State Electronics, (54) 9, p.855-860
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    Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

    Ortolland, Claude
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    Mathew, Suraj
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    Duffy, Ray
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    Saino, Kanta
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    Kim, Chul Sung
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    Mertens, Sofie  
    Proceedings paper
    2009, 10th International Conference on Ultimate Integration of Silicon - ULIS, 18/03/2009, p.147-150
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    Control of laser induced interface traps with in-line corona charge metrology

    Everaert, Jean-Luc
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    Rosseel, Erik  
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    Ortolland, Claude
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    Aoulaiche, Marc
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    Hoffmann, Thomas Y.
    Proceedings paper
    2008, 16th Annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 30/09/2008, p.163-168
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    High-mobility Si1-xGex-channel PFETs: layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths

    Eneman, Geert  
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    Yamaguchi, Shinpei
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    Ortolland, Claude
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    Takeoka, Shinji
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    Witters, Liesbeth  
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.41-42
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    Influence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantation

    Rosseel, Erik  
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    Ortolland, Claude
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    Hikavyy, Andriy  
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    Schram, Tom  
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    Falepin, Annelies  
    Proceedings paper
    2010, 18th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 29/09/2010, p.32-40
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    Influence of the process sequence and termal budget on the straion fof SiC stressor layers formed by Ion Implantation

    Rosseel, Erik  
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    Ortolland, Claude
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    Hikavyy, Andriy  
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    Schram, Tom  
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    Falepin, Annelies  
    Meeting abstract
    2010-10, 18th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 29/09/2010
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    Interface/bulk trap recovery after submeltl aser anneal and the impact to NBTI reliability

    Cho, Moon Ju
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    Aoulaiche, Marc
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    Degraeve, Robin  
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    Ortolland, Claude
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    Kauerauf, Thomas
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    Kaczer, Ben  
    Journal article
    2010, IEEE Electron Device Letters, (31) 6, p.606-608
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    Ion-implantation-based low-cost Hk/MG process for CMOS low-power application

    Ortolland, Claude
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    Sahhaf, Sahar  
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    Srividya, Vidya
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    Degraeve, Robin  
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    Saino, Kanta
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    Kim, Chul-Sung
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.185-186
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    Junction anneal sequence optimization for advanced high-k / metal gate CMOS technology

    Ortolland, Claude
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    Ragnarsson, Lars-Ake  
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    Kerner, Christoph  
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    Chiarella, Thomas  
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    Rosseel, Erik  
    Proceedings paper
    2009, 9th International Workshop on Junction Technology - IWJT, 11/06/2009
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    Laser annealed junctions: pocket profile analysis using an atomistic kinetic Monte Carlo approach

    Noda, Taiji
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    Ortolland, Claude
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    Vandervorst, Wilfried  
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    Vrancken, Christa  
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    Rosseel, Erik  
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.73-74
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    Laser-annealed junctions with advanced CMOS gate stacks for 32nm node: perspectives on device performance and manufacturability

    Ortolland, Claude
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    Noda, Taiji
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    Chiarella, Thomas  
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    Kubicek, Stefan  
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    Kerner, Christoph  
    Proceedings paper
    2008, Symposium on VLSI Technology. Digest of Technical Papers, 17/06/2008, p.186-187
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    Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?

    Chiarella, Thomas  
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    Witters, Liesbeth  
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    Mercha, Abdelkarim  
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    Kerner, Christoph  
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    Dittrich, Rok
    Proceedings paper
    2009, 39th European Solid-State Device Research Conference - ESSDERC, 14/09/2009, p.85-88
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    Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?

    Mitard, Jerome  
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    Witters, Liesbeth  
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    Mercha, Abdelkarim  
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    Kerner, Christoph  
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    Dittrich, Rok
    Proceedings paper
    2009, 35th European Solid-State Circuits Conference - ESSCIRC, 14/09/2009, p.84-87
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    Monitoring of local and global temperature non-uniformities by means of Therma-Probe and Micro Four-Point Probe metrology

    Rosseel, Erik  
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    Petersen, Dirch
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    Osterberg, Frederik
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    Hansen, Ole
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    Bogdanowicz, Janusz  
    Proceedings paper
    2009, 17th Annual IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 29/09/2009
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    New carbon-based thermal stability improvement technique for NiPtSi used in CMOS technology

    Ortolland, Claude
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    Togo, Mitsuhiro
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    Rosseel, Erik  
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    Mertens, Sofie  
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    Kittl, Jorge
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    Lauwers, Anne  
    Oral presentation
    2010, Materials for Advanced Metallization Conference
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    On the 'permanent' component of NBTI

    Grasser, Tibor
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    Aichinger, Thomas
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    Reisinger, Hans
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    Franco, Jacopo  
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    Wagner, Paul-Jürgen
    Proceedings paper
    2010, IEEE International Integrated Reliability Workshop - IIRW, 17/10/2010, p.2-7
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    Optimization of post ion implant ash plasma and clean for ultra shallow extension/halo implantation

    Mannaert, Geert  
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    Schram, Tom  
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    Ortolland, Claude
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    Demand, Marc  
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    Sonnemans, Roger
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    Berry, Ivan
    Meeting abstract
    2011, 4th International Workshop on Plasma Etch and Strip in Microelectronics - PESM, 5/05/2011
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