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Browsing by Author "Pace, C."

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    1/f Noise in drain and gate current of MOSFETs with high-k gate stacks

    Magnone, P.
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    Crupi, F.
    ;
    Giusi, G.
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    Pace, C.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    ;
    Pantisano, Luigi
    ;
    Maji, D.
    Journal article
    2009, IEEE Transactions on Device and Materials Reliability, (9) 2, p.180-189
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    A model for MOS gate stack quality evaluation based on the gate current 1/f noise

    Magnone, P.
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    Crupi, F.
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    Iannacone, G.
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    Giusi, G.
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    Pace, C.
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    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2008, 9th European Workshop on Ultimate Integration of Silicon - ULIS, 12/03/2008, p.141-144
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    Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures

    Crupi, F.
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    Giusi, G.
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    Iannacone, G.
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    Magnone, P.
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    Pace, C.
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    Simoen, Eddy  
    ;
    Claeys, Cor
    Journal article
    2009, Journal of Applied Physics, (106) 7, p.73710
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    Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

    Maji, D.
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    Crupi, F.
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    Magnone, P.
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    Giusi, G.
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    Pace, C.
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    Simoen, Eddy  
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    Rao, V.Ramgopal
    Proceedings paper
    2009, 2nd International Workshop on Electron Devices and Semiconductor Technology - IEDST, 1/06/2009
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    Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

    Srinivasan, Purushothaman
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    Crupi, F.
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    Simoen, Eddy  
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    Magnone, P.
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    Pace, C.
    ;
    Misra, D.
    ;
    Claeys, Cor
    Journal article
    2007, Microelectronics Reliability, (47) 4_5, p.501-504
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    Matching performance of FinFET devices with fin widths down to 10nm

    Magnone, Paolo
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    Mercha, Abdelkarim  
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    Subramanian, Vaidy
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    Parvais, Bertrand  
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    Collaert, Nadine  
    Journal article
    2009, IEEE Electron Device Letters, (30) 12, p.1374-1376
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    Modeling the gate current 1/f noise and its application to advanced CMOS devices

    Crupi, F.
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    Magnone, P.
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    Iannacone, G.
    ;
    Giusi, G.
    ;
    Pace, C.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2008, 9th International Conference on Solid-State and Integrated-Circuit Technology - IC-SICT, 20/10/2008, p.420-423
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    On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack

    Maji, D.
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    Crupi, F.
    ;
    Giusi, G.
    ;
    Pace, C.
    ;
    Simoen, Eddy  
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    Claeys, Cor
    ;
    Rao, V.R.
    Journal article
    2008, Applied Physics Letters, (92) 16, p.163508
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    Positive bias temperature instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

    Crupi, Felice
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    Pace, C.
    ;
    Cocorullo, G.
    ;
    Groeseneken, Guido  
    ;
    Aoulaiche, Marc
    ;
    Houssa, Michel  
    Journal article
    2005-06, Microelectronic Engineering, 80, p.130-133
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    The role of the interfaces in the 1/f noise of MOSFETs with high-k gate stacks

    Crupi, F.
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    Magnone, P.
    ;
    Simoen, Eddy  
    ;
    Pantisano, Luigi
    ;
    Giusi, G.
    ;
    Pace, C.
    ;
    Claeys, Cor
    Meeting abstract
    2009, 215th ECS Meeting, 24/05/2009
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    The role of the interfaces in the 1/f noise of MOSFETs with high-k gate stacks

    Crupi, F.
    ;
    Magnone, P.
    ;
    Simoen, Eddy  
    ;
    Mercha, Abdelkarim  
    ;
    Pantisano, Luigi
    ;
    Giusi, G.
    ;
    Pace, C.
    Proceedings paper
    2009, Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics 10, 24/05/2009, p.87-99
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    Understanding and optimization of hot-carrier reliability in germanium-on-silicon pMOSFETs

    Maji, D.
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    Crupi, Felice
    ;
    Amat, E.
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    Simoen, Eddy  
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    De Jaeger, Brice  
    ;
    Brunco, David
    ;
    Manoj, C.R.
    Journal article
    2009, IEEE Transactions on Electron Devices, (56) 5, p.1063-1069

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