Browsing by Author "Palmans, Roger"
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Publication Cu(Mn) seed layers in single damascene trenches with dimensions down to 30 nm
Proceedings paper2009, Advanced Metallization Conference 2008 (AMC 2008), 23/09/2008, p.237-242Publication Cu(Mn) seed layers in single damascene trenches with dimensions down to 30 nm
Meeting abstract2008, Advanced Metallization Conference - AMC, 23/09/2008Publication Development of an electroless copper deposition bath for via fill applications on TiN seed layers
Publication Development of an electroless copper deposition bath for via fill applications on TiN seed layers
Publication Direct copper electroplating
Proceedings paper2000, Advanced Metallization Conference; 3-5 October 2000; San Diego, Ca, USA. To be published in 2001., p.31-31Publication Direct copper plating on highly resistive barrier layers
Palmans, RogerMeeting abstract2005, Meeting Abstracts 208th Meeting of the Electrochemical Society. Science, Technology, and Tools for Electrodeposition, 17/10/2005, p.667Publication Dual silicide technology: WSix polycide gate and self-aligned CoSi2 source/drain
Proceedings paper1994, 24th European Solid State Device Research Conference - ESSDERC, 11/09/1994, p.287-290Publication Electrical and mechanical characterization of chemical vapor deposition of tungsten on sputter-deposited TiN layers
Journal article1995, J. Appl. Phys., (78) 12, p.7313-22Publication Electroless copper deposition on TiN
Oral presentation1997, 1997 Joint International Meeting ECS (Electrochemical Society) and ISE (International Society of Electrochemistry) : Symposium oPublication Electroless deposition of Cu with solutions containing either Mg2+ or Pd2+ ions
Journal article1999, Physica Scripta, T79, p.232-235Publication Etch process development for FLARE(tm) for dual damascene architecture using a N2/O2 plasma
Proceedings paper1999, Proceedings of the International Interconnect Technology Conference - IITC; San Francisco, CA, USA., p.59-61Publication Filling of 80 nm structures using a novel copper oxide reduction and reflow approach
Oral presentation2004, Advanced Metallization ConferencePublication Filling of 80nm trenches using a novel copper oxide reduction and reflow approach
Proceedings paper2005, Advanced Metallization Conference 2004, 19/10/2004, p.321-326Publication High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed
Publication Impact of rapid thermal annealing of Ti/TiN bilayers on subsequent chemical vapor deposition of tungsten
Proceedings paper1996, Advanced Metallization for Future ULSI, 8/04/1996, p.365-370Publication Influence of hydrogen on chemical vapor deposition of tungsten on sputter-deposited TiN layers
Journal article1995, Appl. Phys. Lett., 67, p.2998-3000Publication Influence of the electron mean free path on the resistivity of thin metal films
Journal article2004, Microelectronic Engineering, (76) 1_4, p.146-152Publication Integration of electroless and electrolytic Cu and IC back end of line technologies
Proceedings paper2000, Electrochemical Technology Applications in Electronics III, 17/10/1999, p.71-79Publication Integration of electroless and electrolytic Cu in the IC back end line of technologies
Meeting abstract1999, 196th Meeting of the Electrochemical Society: 3rd Int. Symposium on Electrochemical Technology Applications in Electronics, 17/10/1999, p.903Publication Ion-pair chromatography of bis (sodium-sulfopropyl)disulfide brightener in acidic copper plating baths