Browsing by Author "Penaud, Julien"
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Publication A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.1961Publication A DLTS study of Pt/Al2O3/InxGa1-xAs capacitors
Proceedings paper2009, Analytical Techniques for Semiconductor Materials and Process Characterization 6 - ALTECH, 4/10/2009, p.151-161Publication ALD-Al2O3 passivation for solar cells : high temperature stability
Proceedings paper2011, 26th European Photovoltaic Solar Energy Conference - EU PVSEC, 5/09/2011, p.2273-2275Publication Capacitance-voltage (CV) characterization of GaAs-oxide interfaces
Meeting abstract2008, E-MRS Spring Meeting Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS, 26/05/2008Publication Capacitance-voltage (CV)characterization of GaAs-oxide interfaces
Proceedings paper2008, Physics and Technology of High-k Dielectrics 6, 12/10/2008, p.507-519Publication Capacitance-voltage characterization of GaAs-Oxide interfaces
Journal article2008, Journal of the Electrochemical Society, (155) 12, p.H945-H950Publication Development of rear side polishing adapted to advanced solar cell concepts
Proceedings paper2011, 26th European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC, 5/09/2011, p.2210-2216Publication Effective reduction of interfacial traps in Al2O3 /GaAs(001) gate stacks using surface engineering and thermal annealing
Journal article2010, Applied Physics Letters, (97) 11, p.112901Publication Electrical characterization of InGaAs ultra-shallow junctions
Proceedings paper2009, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 26/04/2009Publication Electrical characterization of InGaAs ultra-shallow junctions
Journal article2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1C41-C1C47Publication Electrical properties of III-V/oxide interfaces
Meeting abstract2009, 215th Electrochemical Society Spring Meeting, 24/05/2009, p.1337Publication Electrical properties of III-V/oxide interfaces
Proceedings paper2009, Graphene and Emerging Materials for Post-CMOS Applications, 24/05/2009, p.375-386Publication Ge and III/V devices for advanced CMOS
; ; ; ; Proceedings paper2009, 10th International Conference on Ultimate Integration of Silicon - ULIS, 18/03/2009, p.83-86Publication Ge and III/V devices on Si for advanced CMOS
Meeting abstract2009, 5th Handai Nanoscience and Nanotechnology International Symposium, 1/09/2009Publication H2S molecular beam passivation of Ge(001)
Journal article2011, Microelectronic Engineering, (88) 4, p.399-402Publication High FET performance for a future CMOS GeO2-based technology
Journal article2010, IEEE Electron Device Letters, (31) 5, p.402-404Publication High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap
Proceedings paper2009, High-k Dielectrics on Semiconductors with High Carrier Mobility, 30/11/2009, p.1194-A07-01Publication High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
Proceedings paper2009, High Dielectric Constant Materials and Gate Stacks 7, 4/10/2009, p.51-65Publication High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2109Publication Impact of surface preparation prior to ALD-Al2O3 deposition for PERC type solar cell
Proceedings paper2012, 27th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC, 24/09/2012, p.1974-1977