Browsing by Author "Ponomarev, Youri"
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Publication A manufacturable 25nm planar MOSFET technology
Publication A practical baseline process for advanced CMOS devices research
Proceedings paper2003, Proceedings 33rd European Solid-State Device Research Conference - ESSDERC, 16/09/2003, p.27-30Publication Advanced PMOS device architecture for highly-doped ultra-shallow junctions
Journal article2004, Japanese J. of Appl. Phys. Part 1, (43) 4B, p.1778-1783Publication Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies
Publication CMOS device optimisation for mixed-signal technologies
Publication CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Proceedings paper2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.15-22Publication Drift mobile and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3
Journal article2000, J. Appl. Physics, (88) 4, p.2016-2023Publication Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
Proceedings paper2003, 14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference - ASMC, 31/03/2003, p.133-136Publication Impact of channel engineering technology on HC performance of 100 nm MOSFETs
Proceedings paper2001, Proceedings of the 31st European Solid-State Device Research Conference, 11/09/2001, p.283-286Publication Laser annealing for ultra-shallow junction formation in advanced CMOS
Proceedings paper2002, Rapid Thermal And Other Short-Time Processing Technologies III, 12/05/2002, p.413-426Publication Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs
Proceedings paper2000, Extended Abstracts of the International Conference on Solid State Devices and Materials; Sendai, Japan., p.66-67Publication Pre-amorphization and co-implantation suitability for advanced PMOS devices integration
; ; ; Dachs, CharlesProceedings paper2003, Extended Abstracts of the 2003 International Conference on Solid State Device and Materials, 16/09/2003, p.740-741