Browsing by Author "Porret, Clément"
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Publication 12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices
; ; ; ; Huynh Bao, TrongProceedings paper2019, 2019 Symposium on VLSI Technology, 9/06/2019, p.T15-1Publication 60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator
Proceedings paper2021, Optical Fiber Communications Conference and Exhibition (OFC), JUN 06-11, 2021Publication A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks
Proceedings paper2018, Ultra Clean Processing of Semiconductor Surfaces XIV, 3/09/2018, p.113-120Publication Ab initio analysis of defect formation and dopant activation in P and As co-doped Si
; ; ; ; ; Meeting abstract2019, 2019 E-MRS Fall Meeting and Exhibit, 16/09/2019Publication Advanced germanium devices for optical interconnects
Oral presentation2018, EW-Heraeus Seminar on Quantum Networks - From Building Blocks to ApplicationsPublication Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET
Proceedings paper2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.496-499Publication Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application
Proceedings paper2017, 30th Annual Conference of the IEEE Photonics Society - IPC, 1/10/2017, p.311-312Publication Application of Cl2 for low temperature etch and epitaxy
Meeting abstract2018, 1st Joint ISTDM / ICSI 2018 Conference, 27/05/2018, p.87-88Publication Application of Cl2 for low temperature etch and epitaxy
Journal article2019, Semiconductor Science and Technology, (34) 7, p.74003Publication Application of group IV epitaxy in the advanced CMOS fabrication
Meeting abstract2018, 2018 Lawrence Symposium on Epitaxy, 18/02/2018Publication Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling constrast imaging
Proceedings paper2018, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 8, 30/09/2018, p.387-396Publication Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling contrast imaging
Meeting abstract2018, ECS AiMES 2018 Meeting, 30/09/2018, p.1069Publication Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis
Journal article2020, Journal of Materials Chemistry C, (8) 29, p.10060-10070Publication Automated calibration of model-driven reconstructions in atom probe tomography
Journal article2022, JOURNAL OF PHYSICS D-APPLIED PHYSICS, (55) 37, p.375301Publication B and Ga Co-Doped Si1-xGex for p-Type Source/Drain Contacts
; ; ; ; ; Journal article2022, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, (11) 2, p.Art. 024008Publication B and Ga co-doping in epitaxial SiGe: challenges and opportunities
Meeting abstract2020, ECS PRIME 2020, 4/10/2020, p.G01-1732Publication Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers on Si
Journal article2018, Applied Physics Letters, (113) 16, p.161101Publication Challenges in graphene film production and transfer
Proceedings paper2017, Graphene Connect Workshop, 28/09/2017Publication Characterization of annealing and dopant activation processes using Differential Hall Effect Metrology (DHEM)
Proceedings paper2021, Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 11, 30/05/2021, p.113Publication Characterization of Doping and Activation Processes Using Differential Hall Effect Metrology (DHEM)
Meeting abstract2021-05, 239th ECS Meeting: G01: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 11, 2021/05/30 - 2021/06/03, p.1009