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Browsing by Author "Raymaekers, Tom"

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    3D measurement of 3D NAND memory hole with CD-SEM and tilted FIB

    Ohashi, Takeyoshi
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    Yamaguchi, Atsuko
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    Hasumi, Kazuhisa
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    Ikota, Masami
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    Tan, Chi Lim
    Proceedings paper
    2017, 43rd International Conference on Micro and Nanoengineering - MNE, 18/09/2017, p.OC073
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    Enabling CD SEM metrology for 5nm technology node and beyond

    Lorusso, Gian  
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    Ohashi, Takeyoshi
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    Yamaguchi, Astuko
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    Inoue, Osamu
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    Sutani, Takumichi
    Proceedings paper
    2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 26/02/2017, p.1014512
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    First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices

    Delhougne, Romain  
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    Arreghini, Antonio  
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    Rosseel, Erik  
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    Hikavyy, Andriy  
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    Vecchio, Emma  
    Proceedings paper
    2018, IEEE Symposium on VLSI Technology, 18/06/2018, p.203-204
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    First demonstration of MOVPE In1-xGaxAs macaroni channel for 3-D NAND memory devices

    Ramesh, Siva  
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    Vadakupudhu Palayam, Senthil  
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    Rosseel, Erik  
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    Arreghini, Antonio  
    Meeting abstract
    2019, International Memory Workshop 2019, 13/05/2019, p.87-90
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    From planar to vertical capacitors : a first step towards ferroelectric V-FeFET integration

    Florent, Karine
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    Lavizzari, Simone
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    Di Piazza, Luca  
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    Popovici, Mihaela Ioana  
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    Potoms, Goedele  
    Proceedings paper
    2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.164-167
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    In depth analysis of 3D NAND enablers in gate stack integration and demonstration in 3D devices

    Tan, Chi Lim
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    Lavizzari, Simone
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    Blomme, Pieter  
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    Breuil, Laurent  
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    Vecchio, Emma  
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    Sebaai, Farid  
    Proceedings paper
    2017, International Memory Workshop, 14/05/2017, p.1-4
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    Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices

    Breuil, Laurent  
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    El Hajjam, Gabriel
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    Ramesh, Siva  
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    Ajaykumar, Arjun  
    ;
    Arreghini, Antonio  
    Proceedings paper
    2020, 2020 IEEE International Memory Workshop (IMW), 17/05/2020, p.1-4

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