Browsing by Author "Raymaekers, Tom"
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Publication 3D measurement of 3D NAND memory hole with CD-SEM and tilted FIB
;Ohashi, Takeyoshi ;Yamaguchi, Atsuko ;Hasumi, Kazuhisa ;Ikota, MasamiTan, Chi LimProceedings paper2017, 43rd International Conference on Micro and Nanoengineering - MNE, 18/09/2017, p.OC073Publication Enabling CD SEM metrology for 5nm technology node and beyond
Proceedings paper2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 26/02/2017, p.1014512Publication First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices
Proceedings paper2018, IEEE Symposium on VLSI Technology, 18/06/2018, p.203-204Publication First demonstration of MOVPE In1-xGaxAs macaroni channel for 3-D NAND memory devices
Meeting abstract2019, International Memory Workshop 2019, 13/05/2019, p.87-90Publication From planar to vertical capacitors : a first step towards ferroelectric V-FeFET integration
Proceedings paper2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.164-167Publication In depth analysis of 3D NAND enablers in gate stack integration and demonstration in 3D devices
Proceedings paper2017, International Memory Workshop, 14/05/2017, p.1-4Publication Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices
Proceedings paper2020, 2020 IEEE International Memory Workshop (IMW), 17/05/2020, p.1-4