Browsing by Author "Reed, Robert"
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Publication Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
;Jiang, Rong ;Zhang, En Xia ;Liao, Wenjun ;Liang, Chundong ;Fleetwood, DanielSchrimpf, RonaldJournal article2018, IEEE Transactions on Nuclear Science, (65) 1, p.175-183Publication Charge collection mechanisms of Ge-channel bulk pMOSFETs
;Samsel, Isaak ;Zhang, E.X. ;Sternberg, A.L. ;Ni, K. ;Reed, Robert ;Fleedwood, DanielAlles, M.L.Journal article2015, IEEE Transactions on Nuclear Science, (62) 6, p.2725-2731Publication Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs
;Duan, Guo Xing ;Hachtel, Jordan ;Zhang, En Xia ;Zhang, Cher XuanFleetwood, DanielJournal article2016, IEEE Transactions on Device and Materials Reliability, (16) 4, p.541-548Publication Electrical effect of a single extended defect in MOSFETs: a simulation study
Journal article2016, IEEE Transactions on Electron Devices, (63) 8, p.3069-3075Publication Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Proceedings paper2018-09, Radiation Effects on Components and Systems - RADECS, 16/09/2018Publication Geometry dependence of total dose effects in bulk FINFETs
;Chatterjee, I ;Zhang, E.X. ;Buva, B. L. ;Reed, Robert ;Alles, M. L. ;Nahatme, N. N.BAll, D. R.Journal article2014, IEEE Transactions on Nuclear Science, (61) 6, p.2951-2958Publication Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
Proceedings paper2020, Nuclear & Space Radiation Effects Conference - NSREC, 20/07/2020, p.PC-6Publication Low-frequency Noise and Defects in Copper and Ruthenium Resistors
Journal article2019, Applied Physics Letters, (114) 20, p.203501Publication On the assessment of electrically active defects in high-mobility materials and devices
Proceedings paper2016, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 25/10/2016, p.300-303Publication Radiation effects in advanced multiple-gate and silicon-on-insulator transistors
Journal article2013, IEEE Transactions on Nuclear Science, (60) 3, p.1970-1991Publication Single event transient response of vertical and lateral waveguide-integrated germanium photodiodes
Proceedings paper2020-07, Nuclear & Space Radiation Effects Conference - NSREC, 20/07/2020, p.PD-1Publication Single-event induced charge collection in Ge-channel pMos FinFETs
;Rony, M.W. ;Samsel, Isaak ;Zhang, En Xia ;Sternberg, Andrew ;Li, KanReaz, MahumedProceedings paper2020-07, Nuclear & Space Radiation Effects Conference - NSREC, 1/12/2020, p.E-1Publication Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si
Meeting abstract2016-07, IEEE Nuclear Space and Radiation Conference - NSREC, 13/07/2016Publication Total ionizing dose effects on ultra thin buried oxide floating body memories
Proceedings paper2012-04, IEEE International Reliability Physics Symposium - IRPS, 15/04/2012, p.MY-3Publication X-Ray and proton radiation effects on 40 nm CMOS physically unclonable function devices
Journal article2018, IEEE Transactions on Nuclear Science, (65) 8, p.1519-1524