Browsing by Author "Rittersma, Chris"
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Publication A practical baseline process for advanced CMOS devices research
Proceedings paper2003, Proceedings 33rd European Solid-State Device Research Conference - ESSDERC, 16/09/2003, p.27-30Publication Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies
Publication Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, Workshop "Nouveaux Oxides à Forte Permittivité dans l'Intégration des Semiconducteurs"Publication Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
Proceedings paper2003, 14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference - ASMC, 31/03/2003, p.133-136Publication In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapour deposition
Journal article2002-09, Semiconductor Fabtech, 17, p.111-115Publication In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
Journal article2003, Journal of the Electrochemical Society, (150) 9, p.F169-F172Publication Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.747-760Publication Materials and electrical characterization of metal gate electrodes on high-k dielectrics for advanced CMOS technologies
Proceedings paper2002, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials - SSDM, 17/09/2002, p.174-175Publication Mixed-signal and noise properties of nMOSFETs with HfSiON/TaN gate stacks
Proceedings paper2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 13/09/2005, p.105-108Publication Molecular beam epitaxy for advanced gate stack materials and processes
Publication MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility Semiconductors