Browsing by Author "Ronchi, Nicolo"

A comprehensive variability study of doped HfO2 FeFET for memory applications

A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs

AlGaN/GaN power Schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors

Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric

Breakdown investigation in GaN-based MIS-HEMT devices

Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN

Comparison of AlGaN/GaN MISHEMT powerbar designs

Comparison of AlGaN/GaN MISHEMT powerbar designs

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

Defect profiling in FEFET Si:HfO2 layers

Demonstration of 64 Conductance States and Large Dynamic Range in Sidoped HfO2 FeFETs under Neuromorphic Computing Operations

Device breakdown optimization of Al2O3/GaN E-mode MISFETs

Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

Electron emission from deep traps in HfO 2 under thermal and optical excitation