Browsing by Author "Rothschild, Aude"
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Publication 45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Journal article2005, Microelectronic Engineering, 80, p.7-10Publication A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states
Meeting abstract2011, 220th ECS Fall Meeting, 9/10/2011, p.1989Publication A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states
Proceedings paper2011, Photovoltaics for the 21st Century 7, 9/10/2011, p.37-44Publication Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.198-199Publication Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Proceedings paper2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159Publication Al2O3 surface passivation : electrical characterization using the Quantox tool
Proceedings paper2011, 37th IEEE Photovoltaic Specialists Conference - PVSC, 19/06/2011Publication ALD Al2O3 for industrial Si solar cells: advanced cleaning and in-depth characterization
Meeting abstract2010, 35th IEEE Photovoltaic Specialists Conference, 20/06/2010Publication ALD Al2O3 for surface passivation of silicon solar cells: impact of covering metal
; ; ; Proceedings paper2010, 10th International Conference on Atomic Layer Deposition, 20/06/2010, p.80Publication ALD-Al2O3 passivation for solar cells : high temperature stability
Proceedings paper2011, 26th European Photovoltaic Solar Energy Conference - EU PVSEC, 5/09/2011, p.2273-2275Publication ALD-Al2O3 passivation for solar cells: charge investigation
; ; ; Proceedings paper2010, 25th European Photovoltaic Solar Energy Conference and Exhibition - EPVSEC, 6/09/2010, p.1382-1385Publication Atomic layer deposition of Al2O3 as rear surface passivation for p-type Si passivated emitter and rear cells: an overview
Oral presentation2012, IEEE Photovoltaic Specialists Conference - PVSCPublication Atomic layer deposition of Al2O3 for industrial local Al back-surface field (BSF) solar cells
Journal article2011, Photovoltaics International. The Technology Resource for PV Professionals, 13, p.92-101Publication Band edge work function metal gates using PEALD TaCN electrodes
Oral presentation2009, 9th International Conference on Atomic Layer Deposition - ALDPublication Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells
Journal article2012, Solar Energy Materials and Solar Cells, 101, p.204-209Publication Challenges in scaling of CMOS devices towards 65nm node
Proceedings paper2003-06, Diagnostic and Yield, 23/06/2003Publication Characterization of high-throughput spatial ALD Al2O3 as surface passivation for industrial local Al BSF Si solar cells
Proceedings paper2011, 26th European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC, 5/09/2011, p.2189-2190Publication Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
Journal article2008, IEEE Electron Device Letters, (29) 1, p.34-37Publication Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application
Publication Effect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cells
Proceedings paper2008, Materials Science and Technology for Nonvolatile Memories, 24/03/2008, p.1071-F02-08Publication Evolutionary process development towards next generation crystalline silicon solar cells: A semiconductor process toolbox application
Journal article2012, EPJ Photovoltaics, 3, p.35005