Browsing by Author "Russ, Christian"
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Publication A compact model for the grounded-gate nMOS behaviour under CDM ESD stress
Proceedings paper1996, Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium, 10/09/1996, p.302-315Publication A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress
Journal article1998, Journal of Electrostatics, (42) 4, p.351-381Publication A quantitative inquisition into ESD sensitivity to strain in nanoscale CMOS protection devices
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.808-811Publication Analysis of HBM ESD testers and specifications using a fourth order lumped element model
Journal article1994, Quality and Reliability Engineering International, 10, p.325-334Publication Characterization and optimization of sub-32nm FinFET devices for ESD applications
Journal article2008, IEEE Transactions on Electron Devices, (55) 12, p.3507-3516Publication Design methodology for FinFET GG-NMOS ESD protecction devices
Proceedings paper2008-05, 2nd International ESD Workshop - IEW, 12/05/2008Publication Design methodology of FinFET devices that meet IC-level HBM ESD targets
Proceedings paper2008-09, 30th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD, 7/09/2008, p.295-303Publication Electrical and thermal scaling trends for SOI FinFET ESD design
Proceedings paper2009, 31st Annual EOS/ESD Symposium, 30/08/2009, p.2A.3Publication Electrical-based ESD characterization methodology for ultrathin body SOI MOSFETs
Journal article2010, IEEE Transactions on Device and Materials Reliability, (10) 1, p.130-141Publication Electrothermal device simulation of a gg-nMOSt under HBM ESD conditions
;Russ, Christian ;Kreisbeck, J. ;Gieser, H. ;Guggenmos, X.Kanert, W.Proceedings paper1995, Proceedings of the 6th ESREF Conference, 3/10/1995, p.141-146Publication ESD protection elements during HBM stress tests - further numerical and experimental results
;Russ, Christian ;Gieser, H.Verhaege, KoenProceedings paper1994, Proceedings 16th Annual EOS/ESD Symposium, 26/09/1994, p.96-105Publication ESD Protection Elements during HBM Stress Tests - Further Numerical and Experimental Results
;Russ, Christian ;Gieser, H.Verhaege, K.Proceedings paper1994, Proceedings of the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF); October 4-7, 199, p.457-466Publication ESD protection elements during HBM stress tests - further numerical and experimental results
;Russ, Christian ;Gieser, H.Verhaege, KoenJournal article1995, Quality and Reliability Engineering International, (11) 4, p.285-294Publication ESD-aspects of FinFETs and other most advanced devices
Oral presentation2010, International ESD Workshop - IEWPublication Grounded-gate nMOS transistor behaviour under CDM ESD stress conditions
Journal article1997, IEEE Trans. Electron Devices, (44) 11, p.1972-1980Publication Influence of well profile and gate length on the ESD performance of a fully silicided 0.25 μm CMOS technology
Proceedings paper1997, Electrical Overstress/ Electrostatic Discharge Symposium, 23/09/1997, p.308-315Publication Justifications for reducing HBM and MM ESD qualification test time
;Verhaege, Koen ;Robinson-Hahn, D. ;Russ, Christian ;Farris, M. ;Scanlon, J. ;Lin, D.Veltri, J.Journal article1996, Microelectronics and Reliability, 36, p.1715-1718Publication Methodology for design optimization of SOI FinFET grounded-gate NMOS devices
Journal article2010, IEEE Transactions on Device and Materials Reliability, (10) 3, p.338-346Publication Next generation bulk FinFET devices and their benefits for ESD robustness
Proceedings paper2009, 31st Annual EOS/ESD Symposium, 30/08/2009, p.2A.1Publication Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness
Proceedings paper2009, RCJ Symposium, 22/10/2009