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Browsing by Author "Russ, Christian"

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    A compact model for the grounded-gate nMOS behaviour under CDM ESD stress

    Russ, Christian
    ;
    Verhaege, Koen
    ;
    Bock, Karlheinz
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    Roussel, Philippe  
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    Groeseneken, Guido  
    Proceedings paper
    1996, Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium, 10/09/1996, p.302-315
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    A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress

    Russ, Christian
    ;
    Verhaege, Koen
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    Bock, Karlheinz
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    Roussel, Philippe  
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    Groeseneken, Guido  
    Journal article
    1998, Journal of Electrostatics, (42) 4, p.351-381
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    A quantitative inquisition into ESD sensitivity to strain in nanoscale CMOS protection devices

    Sarkar, Deblina
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    Thijs, Steven  
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    Linten, Dimitri  
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    Russ, Christian
    ;
    Gossner, Harald
    Proceedings paper
    2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.808-811
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    Analysis of HBM ESD testers and specifications using a fourth order lumped element model

    Verhaege, Koen
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    Roussel, Philippe  
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    Groeseneken, Guido  
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    Maes, Herman
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    Gieser, H.
    ;
    Russ, Christian
    Journal article
    1994, Quality and Reliability Engineering International, 10, p.325-334
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    Characterization and optimization of sub-32nm FinFET devices for ESD applications

    Thijs, Steven  
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    Tremouilles, David
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    Russ, Christian
    ;
    Griffoni, Alessio
    ;
    Collaert, Nadine  
    Journal article
    2008, IEEE Transactions on Electron Devices, (55) 12, p.3507-3516
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    Design methodology for FinFET GG-NMOS ESD protecction devices

    Thijs, Steven  
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    Russ, Christian
    ;
    Tremouilles, David
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    Linten, Dimitri  
    ;
    Scholz, Mirko
    Proceedings paper
    2008-05, 2nd International ESD Workshop - IEW, 12/05/2008
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    Design methodology of FinFET devices that meet IC-level HBM ESD targets

    Thijs, Steven  
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    Russ, Christian
    ;
    Tremouilles, David
    ;
    Linten, Dimitri  
    ;
    Scholz, Mirko
    Proceedings paper
    2008-09, 30th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD, 7/09/2008, p.295-303
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    Electrical and thermal scaling trends for SOI FinFET ESD design

    Thijs, Steven  
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    Tremouilles, David
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    Griffoni, Alessio
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    Russ, Christian
    ;
    Linten, Dimitri  
    Proceedings paper
    2009, 31st Annual EOS/ESD Symposium, 30/08/2009, p.2A.3
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    Electrical-based ESD characterization methodology for ultrathin body SOI MOSFETs

    Griffoni, Alessio
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    Thijs, Steven  
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    Russ, Christian
    ;
    Tremouilles, David
    ;
    Linten, Dimitri  
    Journal article
    2010, IEEE Transactions on Device and Materials Reliability, (10) 1, p.130-141
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    Electrothermal device simulation of a gg-nMOSt under HBM ESD conditions

    Russ, Christian
    ;
    Kreisbeck, J.
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    Gieser, H.
    ;
    Guggenmos, X.
    ;
    Kanert, W.
    Proceedings paper
    1995, Proceedings of the 6th ESREF Conference, 3/10/1995, p.141-146
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    ESD protection elements during HBM stress tests - further numerical and experimental results

    Russ, Christian
    ;
    Gieser, H.
    ;
    Verhaege, Koen
    Proceedings paper
    1994, Proceedings 16th Annual EOS/ESD Symposium, 26/09/1994, p.96-105
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    ESD Protection Elements during HBM Stress Tests - Further Numerical and Experimental Results

    Russ, Christian
    ;
    Gieser, H.
    ;
    Verhaege, K.
    Proceedings paper
    1994, Proceedings of the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF); October 4-7, 199, p.457-466
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    ESD protection elements during HBM stress tests - further numerical and experimental results

    Russ, Christian
    ;
    Gieser, H.
    ;
    Verhaege, Koen
    Journal article
    1995, Quality and Reliability Engineering International, (11) 4, p.285-294
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    ESD-aspects of FinFETs and other most advanced devices

    Russ, Christian
    ;
    Gossner, Harald
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    Thijs, Steven  
    ;
    Griffoni, Alessio
    Oral presentation
    2010, International ESD Workshop - IEW
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    Grounded-gate nMOS transistor behaviour under CDM ESD stress conditions

    Verhaege, Koen
    ;
    Russ, Christian
    ;
    Luchies, J. M.
    ;
    Groeseneken, Guido  
    ;
    Kuper, F. G.
    Journal article
    1997, IEEE Trans. Electron Devices, (44) 11, p.1972-1980
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    Influence of well profile and gate length on the ESD performance of a fully silicided 0.25 μm CMOS technology

    Bock, Karlheinz
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    Russ, Christian
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    Badenes, Gonçal
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    Groeseneken, Guido  
    ;
    Deferm, Ludo  
    Proceedings paper
    1997, Electrical Overstress/ Electrostatic Discharge Symposium, 23/09/1997, p.308-315
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    Justifications for reducing HBM and MM ESD qualification test time

    Verhaege, Koen
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    Robinson-Hahn, D.
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    Russ, Christian
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    Farris, M.
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    Scanlon, J.
    ;
    Lin, D.
    ;
    Veltri, J.
    Journal article
    1996, Microelectronics and Reliability, 36, p.1715-1718
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    Methodology for design optimization of SOI FinFET grounded-gate NMOS devices

    Thijs, Steven  
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    Russ, Christian
    ;
    Tremouilles, David
    ;
    Griffoni, Alessio
    ;
    Linten, Dimitri  
    Journal article
    2010, IEEE Transactions on Device and Materials Reliability, (10) 3, p.338-346
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    Next generation bulk FinFET devices and their benefits for ESD robustness

    Griffoni, Alessio
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    Thijs, Steven  
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    Russ, Christian
    ;
    Trémouilles, David
    ;
    Linten, Dimitri  
    Proceedings paper
    2009, 31st Annual EOS/ESD Symposium, 30/08/2009, p.2A.1
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    Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness

    Griffoni, Alessio
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    Thijs, Steven  
    ;
    Russ, Christian
    ;
    Tremouilles, David
    ;
    Linten, Dimitri  
    Proceedings paper
    2009, RCJ Symposium, 22/10/2009
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