Browsing by Author "Schrimpf, R.D."
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Publication Charge collection mechanisms of Ge-channel bulk pMOSFETs
;Samsel, Isaak ;Zhang, E.X. ;Sternberg, A.L. ;Ni, K. ;Reed, Robert ;Fleedwood, DanielAlles, M.L.Journal article2015, IEEE Transactions on Nuclear Science, (62) 6, p.2725-2731Publication Efficient reliability testing of emerging memory technologies using multiple radiation sources
;Bennet, W.G. ;Hooten, N.C. ;Weeded-Wright, S. ;Schrimpf, R.D. ;Reed, R.A. ;Alles, M.C.Zhang, E.X.Proceedings paper2014, 23rd Conference on Application of Accelerators in Research and Industry - CAARI, 25/05/2014, p.1-8Publication Heavy ion and laser induced charge collection in SiGe bulk PMOSFETs
;Zhang, E.X. ;Samsel, I.K. ;Hooten, N.C. ;Bennett, W.G. ;Funkhouser, E.D. ;Kai, N.Ball, D.R.Proceedings paper2014, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 14/07/2014, p.PE-4Publication Heavy ion and laser-induced transients in SiGe channel pMOSFETs
;Zhang, E.X. ;Samsel, I.K. ;Bennett, W.G. ;Hooten, N.C. ;McCurdy, M. ;Fleetwood, D.M.Reed, R.A.Proceedings paper2013, International Semiconductors Device Research Symposium, 11/12/2013, p.FA7-03Publication Heavy-ion-induced current transients in bulk and SOI FinFETs
;El-Mamouni, F. ;Zhang, X. ;Ball, D.R. ;Sierawski, B. ;King, M.P. ;Schrimpf, R.D.Reed, R.A.Journal article2012, IEEE Transactions on Nuclear Science, (59) 6, p.2674-2681Publication Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
Journal article2012, IEEE Transactions on Nuclear Science, (59) 6, p.2966-2973Publication Laser- and heavy ion-induced charge collection in bulk FinFETs
;El-Mamouni, F. ;Zhang, E.X. ;Pate, N.D. ;Schrimpf, R.D. ;Reed, R.A. ;Galloway, K.F.McMorrow, D.Journal article2011, IEEE Transactions on Nuclear Science, (58) 6,1, p.2563Publication Laser-induced current transients in bulk FinFETs
;El-Mamouni, F. ;Zhang, E.X. ;Hooten, N. ;Schrimpf, R.D. ;Reed, R. ;Galloway, K.F.McMarrow, D.Meeting abstract2011, Nuclear and Space Radiation Engineering Conference - NSREC, 25/07/2011Publication Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFET devices
Proceedings paper2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.882-885Publication Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
Oral presentation2008, 8th International Workshop on Radiation Effects on Semiconductor Devices for Space ApplicationsPublication Radiation hardness aspects of advanced FinFET and UTBOX devices
Proceedings paper2012, IEEE International SOI Conference, 1/10/2012, p.3.7Publication TID and displacement damage resilience of 1T1R Hfo2 hf resistive memories
;Weeden-Wright, S.L. ;Bennett, W.G. ;Hooten, N.C. ;Zhang, E.X. ;McCurdy, M.W.Schrimpf, R.D.Journal article2014, IEEE Transactions on Nuclear Science, (61) 6, p.2972-2978Publication Total ionizing dose effect on depletion mode Ge pMOSFETs with high-k gate stack: on-off current ratio
Proceedings paper2008, 8th European Workshop on Radiation Effects on Components and Systems - RADECS, 10/09/2008, p.59-63Publication Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
;Wang, L. ;Zhang, E.X. ;Zhang, C.X. ;Duan, G.X. ;Schrimpf, R.D. ;Fleetwood, D.M.Reed, R.A.Proceedings paper2015, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 13/07/2015, p.22-25Publication Total ionizing dose effects on Ge pMOSFETs with high-k gate stack: on/off current ratio
Journal article2009, IEEE Transactions on Nuclear Science, (56) 4, p.1926-1930Publication Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics
;Gorchichko, M. ;Cao, Y. ;Zhang, E.X. ;Yan, D. ;Gong, H. ;Zhao, S.E. ;Wang, P. ;Jiang, R.Liang, C.Journal article2020, IEEE Transactions on Nuclear Science, (67) 1, p.245-252Publication Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs
Oral presentation2012, IEEE Nuclear and Space Radiation Effects Conference - NSREC