Browsing by Author "Schulze, Andreas"
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Publication 3D electrical characterization of CNT-based interconnects
Meeting abstract2011, Workshop on Graphene and Carbon Nanotubes, 23/09/2011Publication 3D-carrier profiling in FinFETs using scanning spreading resistance microscopy
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.119-122Publication 3D-doping in Finfets and nanowires : fabrication and metrology challenges and solutions
Oral presentation2011, E-MRS Symposium I: Transport in Si-based NanodevicesPublication A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs
Proceedings paper2016-06, IEEE Symposium on VLSI Technology, 13/06/2016, p.34-35Publication A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications
Journal article2013, Journal of Applied Physics, (113) 11, p.114310Publication Active dopant profiling of advanced semiconductor devices using scanning spreading resistance microscopy
Meeting abstract2008, Dutch Scanning Probe Microscopy Symposium - SPM, 8/12/2008Publication Advanced metrology for beyond silicon semiconductor device structures
Proceedings paper2015, Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 14/04/2015, p.220-223Publication Advanced Raman spectroscopy using nanofocusing of light
Journal article2017, Advanced Engineering Materials, (19) 8, p.1600612Publication AFM-based tomography for probing the electrical properties in confined volumes at the nanometer scale
Meeting abstract2013, MRS Spring Meeting Symposium Y: Advances in Scanning Probe Microscopy for Imaging Functionality on the Nanoscale, 1/04/2013, p.Y6.01Publication Anisotropic biaxial stress measurements in finFET channels through nano-focused raman spectroscopy
Oral presentation2016, PTW 2016H2Publication Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates
Journal article2017, Journal of Applied Physics, (122) 2, p.25303Publication Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Journal article2018, APL Materials, (6) 5, p.58501Publication Application of FFT-scanning spreading resistance microscopy to the analysis of poly-silicon solar-cells
Oral presentation2014, E-MRS Fall Meeting Symposium H: Local Probing Techniques and In-Situ Measurements of Energy Storage and Conversion MaterialsPublication Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Meeting abstract2014, International Workshop on Nitride Semiconductors - IWN, 24/08/2014Publication Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling constrast imaging
Proceedings paper2018, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 8, 30/09/2018, p.387-396Publication Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling contrast imaging
Meeting abstract2018, ECS AiMES 2018 Meeting, 30/09/2018, p.1069Publication Calibrated boron doped tip fabrication
Proceedings paper2011, Hasselt Diamond Workshop - SBDD XVI, 21/03/2011Publication Characterizing the two-dimensional doping concentration inside silicon-nanowires using scanning spreading resistance microscopy
Proceedings paper2009, Semiconductor Nanowires - Growth,Size-Dependent Properties, and Applications, 13/04/2009, p.1178-AA05-03Publication Combining UHV AFM and SEM for high resolution, repeatable and low noise scanning spreading resistance microscopy
Oral presentation2013, Forum des Microscopies a Sonde LocalePublication Compositional analysis on ensemble of InGaAs fins using TEM and Rutherford backscattering spectrometry
Meeting abstract2017, European Materials Research Society Fall Meeting, 18/09/2017