Browsing by Author "Shi, Yuanyuan"

Advanced Data Encryption using 2D Materials

ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices

Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism

Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS2 via Combined C-AFM and ToF-SIMS Characterization

Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

Engineering wafer-scale epitaxial two-dimensional materials for advanced high-performance nanoelectronics

Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics

Extreme scaling enabled by MX2 transistors: variability challenges (invited)

Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

Minimizing the Interface-Driven Losses in Inverted Perovskite Solar Cells and Modules

Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages

Sources of variability in scaled MoS2 FETs

Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

The sapphire surface structure and its impact on MOCVD grown wafer-scale MoS2 uniformity and MOSFET variability

Time series modeling of the cycle-to-cycle variability in h-BN based memristors

Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides