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Browsing by Author "Stockman, Arno"

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    A physical-statistical approach to AlGaN/GaN HEMT reliability

    Moens, P.
    ;
    Stockman, Arno  
    Proceedings paper
    2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019
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    Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors

    Bakeroot, Benoit  
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    Stockman, Arno  
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    Posthuma, Niels  
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    Stoffels, Steve  
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    Decoutere, Stefaan  
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 1, p.79-86
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    Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3

    Vanhaverbeke, Celine
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    Cauwe, Maarten  
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    Stockman, Arno  
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    Op de Beeck, Maaike  
    ;
    De Smet, Herbert  
    Journal article
    2019, Thin Solid Films, 686, p.137424
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    Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization

    Moens, P.
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    Constant, A.
    ;
    Stockman, Arno  
    ;
    Franchi, J.
    ;
    Allerstam, F.
    Proceedings paper
    2019, 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 19/05/2019
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    Dynamic-ron control via proton irradiation in AlGaN/GaN transistors

    Tajalli, A.
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    Stockman, Arno  
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    Meneghini, M.
    ;
    Mouhoubi, S.
    ;
    Banerjee, A.
    ;
    Gerardin, S.
    ;
    Bagatin, M.
    Proceedings paper
    2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95
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    ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

    Canato, E
    ;
    Meneghini, M.
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    Nardo, A.
    ;
    Masin, F.
    ;
    Barbato, F.
    ;
    Barbato, M.
    ;
    Stockman, Arno  
    ;
    Banerjee, A.
    Journal article
    2019, Microelectronics Reliability, 100, p.113334
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    Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors

    Stockman, Arno  
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    Masin, Fabrizio
    ;
    Meneghini, Matteo
    ;
    Zanoni, Enrico
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    Meneghesso, Gaudenzio
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 12, p.5365-5372
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    Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

    Tajalli, A.
    ;
    Canato, E.
    ;
    Nardo, A.
    ;
    Meneghini, M.
    ;
    Stockman, Arno  
    ;
    Moens, P.
    ;
    Zanoni, E.
    Proceedings paper
    2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.1-6
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    On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

    Stockman, Arno  
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    Canato, E.
    ;
    Tajalli, A.
    ;
    Meneghini, M.
    ;
    Meneghesso, G.
    ;
    Zanoni, E.
    ;
    Moens, P.
    Proceedings paper
    2018, IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.4B.5-1-4B.5-4
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    Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors

    Stockman, Arno  
    PHD thesis
    2020-10
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    Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

    Stockman, Arno
    ;
    Canato, Eleonora
    ;
    Meneghini, Matteo
    ;
    Meneghesso, Gaudenzio
    ;
    Moens, Peter
    Journal article
    2021, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (21) 2, p.169-175
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    Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

    Stockman, Arno  
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    Uren, Michael
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    Tajalli, Alaleh
    ;
    Meneghini, Matteo
    ;
    Bakeroot, Benoit  
    Proceedings paper
    2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.130-133
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    Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

    Stockman, Arno  
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    Canato, Eleonora
    ;
    Meneghini, Matteo
    ;
    Meneghesso, Gaudenzio
    ;
    Moens, Peter  
    Proceedings paper
    2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 19/05/2019, p.287-289
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    μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

    Canato, E.
    ;
    Masin, F.
    ;
    Borga, M.
    ;
    Zanoni, E.
    ;
    Meneghini, M.
    ;
    Meneghesso, G.
    ;
    Stockman, Arno  
    Proceedings paper
    2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019

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