Browsing by Author "Stockman, Arno"
- Results Per Page
- Sort Options
Publication A physical-statistical approach to AlGaN/GaN HEMT reliability
;Moens, P.Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019Publication Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
Journal article2018, IEEE Transactions on Electron Devices, (65) 1, p.79-86Publication Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3
Journal article2019, Thin Solid Films, 686, p.137424Publication Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization
Proceedings paper2019, 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 19/05/2019Publication Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
Proceedings paper2018, 30th International Symposium on Power Semiconductor Devices & ICs - ISPSD, 13/05/2018, p.92-95Publication ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping
;Canato, E ;Meneghini, M. ;Nardo, A. ;Masin, F. ;Barbato, F. ;Barbato, M.; Banerjee, A.Journal article2019, Microelectronics Reliability, 100, p.113334Publication Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Journal article2018, IEEE Transactions on Electron Devices, (65) 12, p.5365-5372Publication Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.1-6Publication On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Proceedings paper2018, IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.4B.5-1-4B.5-4Publication Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
;Stockman, Arno ;Canato, Eleonora ;Meneghini, Matteo ;Meneghesso, GaudenzioMoens, PeterJournal article2021, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (21) 2, p.169-175Publication Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron
Proceedings paper2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.130-133Publication Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
Proceedings paper2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 19/05/2019, p.287-289Publication μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019