Browsing by Author "Takeuchi, Shotaro"
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Publication 200mm Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by CVD
; Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Proceedings paper2010-10, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 10/10/2010, p.529-535Publication Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling
Proceedings paper2008, 4th International Workshop on New Group IV Semiconductor Nanoelectronics, 25/09/2008Publication Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Journal article2011, Microelectronic Engineering, (88) 4, p.342-346Publication Conformal doping of FINFET's: a fabrication and metrology challenge
Meeting abstract2008, E-MRS Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008Publication Conformal ultra shallow junctions by vapor phase doping with boron
Proceedings paper2008-05, 4th International SiGe Technology and Device Meeting - ISTDM, 11/05/2008, p.229-230Publication Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures
Publication Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(001) substrates
Publication Epitaxial Ge on standard STI patterned Si wafers: high quality virtual substrates for Ge pMOS and III/V nMOS
Proceedings paper2009, ULSI Process Integration 6, 4/10/2009, p.335-350Publication Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition
Meeting abstract2008, 214th ECS Meeting, 12/10/2008, p.2386Publication Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition
Proceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 13/10/2008, p.159-162Publication Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
; ; ; Publication Fabrication of high qualtiy Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
; ; ; Journal article2010, Thin Solid Films, (518) 9, p.2538-2541Publication Fabrication of virtual Ge and Ge-rich SiGe substrates using selective or non-selective epitaxial growth
Oral presentation2009, EMRS Spring Meeting: Symp I: Silicon and Germanium issues for future CMOS devices / Nanosil Visionary WorkshopPublication Formation and characterization of Ni(Ge1-ySny)/Ge1-xSnx/Ge contacts
Proceedings paper2010-09, 71st Fall Meeting of the Japan Society of Applied Physics, 14/09/2010Publication Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Journal article2011, Solid-State Electronics, (60) 1, p.46-52Publication Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Oral presentation2010, Workshop: GeSn Developments and Future ApplicationsPublication Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Meeting abstract2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Ge1-xSnx stressors for strained-Ge CMOS
Meeting abstract2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Ge1-xSnx stressors for strained-Ge CMOS
Journal article2011, Solid-State Electronics, (60) 1, p.53-57
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