Browsing by Author "Tallarico, Andrea"
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Publication Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Journal article2017, Microelectronics Reliability, 76-77, p.298-303Publication Gate reliability of p-GaN HEMT with gate metal retraction
Journal article2019, IEEE Transactions on Electron Devices, (66) 11, p.4829-4835Publication Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate
Proceedings paper2021, 2021 IEEE Latin American Electronic Devices Conference - LAEDC2021, 19/04/2021Publication Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
Journal article2017, IEEE Electron Device Letters, (38) 1, p.99-102Publication PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms
Journal article2018, IEEE Transactions on Electron Devices, (65) 1, p.38-44Publication Role of the AlGaN barrier on the long-term gate reliability of power HEMTs
Journal article2020, Microelectronics Reliability, 114, p.113872Publication Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
Journal article2016, IEEE Transactions on Electron Devices, (63) 9, p.3451-3458Publication Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence
Proceedings paper2016, IEEE International Reliability Physics Symposium, 17/04/2016, p.4A.5