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Browsing by Author "Tallarico, Andrea"

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    Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

    Rossetto, Isabella
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    Meneghini, Matteo
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    Canato, E.
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    Barbato, M.
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    Stoffels, Steve  
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    Posthuma, Niels  
    Journal article
    2017, Microelectronics Reliability, 76-77, p.298-303
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    Gate reliability of p-GaN HEMT with gate metal retraction

    Tallarico, Andrea
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    Stoffels, Steve  
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    Posthuma, Niels  
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    Bakeroot, Benoit  
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    Decoutere, Stefaan  
    Journal article
    2019, IEEE Transactions on Electron Devices, (66) 11, p.4829-4835
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    Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate

    Tallarico, Andrea
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    Posthuma, Niels  
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    Bakeroot, Benoit  
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    Decoutere, Stefaan  
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    Fiegna, C
    Proceedings paper
    2021, 2021 IEEE Latin American Electronic Devices Conference - LAEDC2021, 19/04/2021
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    Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs

    Tallarico, Andrea
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    Stoffels, Steve  
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    Magnone, Paolo
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    Posthuma, Niels  
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    Sangiorgi, Enrico
    Journal article
    2017, IEEE Electron Device Letters, (38) 1, p.99-102
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    PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms

    Tallarico, Andrea
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    Stoffels, Steve  
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    Posthuma, Niels  
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    Magnone, Paolo
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    Marcon, Denis  
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 1, p.38-44
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    Role of the AlGaN barrier on the long-term gate reliability of power HEMTs

    Tallarico, Andrea
    ;
    Posthuma, Niels  
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    Bakeroot, Benoit  
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    Decoutere, Stefaan  
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    Sangiorgi, E
    Journal article
    2020, Microelectronics Reliability, 114, p.113872
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    Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

    Hu, Jie
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    Stoffels, Steve  
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    Lenci, Silvia  
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    De Jaeger, Brice  
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    Ronchi, Nicolo  
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    Tallarico, Andrea
    Journal article
    2016, IEEE Transactions on Electron Devices, (63) 9, p.3451-3458
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    Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence

    Tallarico, Andrea
    ;
    Magnone, Paolo
    ;
    Stoffels, Steve  
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    Lenci, Silvia  
    ;
    Hu, Jie
    ;
    Marcon, Denis  
    Proceedings paper
    2016, IEEE International Reliability Physics Symposium, 17/04/2016, p.4A.5

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