Browsing by Author "Tang, Baojun"
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Publication Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.219-222Publication As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability
Journal article2014, Microelectronics Reliability, (54) 9_10, p.1675-1679Publication Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model
Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.558-561Publication Constant voltage electromigration for advanced BEOL copper interconnects
Proceedings paper2015, IEEE International Reliability Physics Symposium - IRPS, 19/04/2015, p.2D.6Publication Cu wire resistance improvement using Mn-based self-formed barriers
Proceedings paper2014, IEEE International Interconnect Technology Conference - IITC, 20/05/2014, p.311-314Publication Defects characterization of hybrid floating gate/ inter-gate dielectric interface in flash memory
; ; Proceedings paper2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.2E-3.1-2E-3.5Publication Direct etched Cu characterization for advanced interconnects
Proceedings paper2015, IEEE International Interconnect Technology Conference - IITC / Materials for Advanced Metallization Conference - MAM, 18/05/2015, p.173-176Publication Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells
Journal article2014, IEEE Transactions on Electron Devices, (61) 5, p.1299-1306Publication Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel
Journal article2014, IEEE Transactions on Electron Devices, (61) 5, p.1501-1507Publication Experimental validation of electromigration by low frequency noise measurement for advanced interconnects application
Proceedings paper2015, 23rd International Conference on Noise and 1/f Fluctuations - ICNF, 2/06/2015, p.1-4Publication Novel bi-layer poly-silicon channel vertical flash cell for ultrahigh density 3D sonos nand technology
Proceedings paper2011, 3rd IEEE International Memory Workshop - IMW, 22/05/2011, p.65-68Publication Optimization of gate stack parameters towards 3D-SONOS application
Journal article2011, Microelectronic Engineering, (88) 7, p.1164-1167Publication Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations
Journal article2014, Microelectronics Reliability, (54) 9_10, p.2258-2261Publication Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks
Journal article2013-07, IEEE Transactions on Electron Devices, (60) 7, p.2261-2267Publication Spectroscopic study of polysilicon traps by means of fast capacitance transients
Journal article2013, Journal of Vacuum Science and Technology B, (31) 1, p.01A110Publication Spectroscopic study of polysilicon traps by means of fast capacitance transients
Meeting abstract2012, 17th Workshop on Dielectrics in Microelectronics - WoDiM, 25/06/2012Publication Statistical characterization of current paths in narrow poly-si channels
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.287-290Publication Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
Meeting abstract2013, 18th Conference of Insulting Films on Semiconductors - INFOS: Book of Abstracts, 25/06/2013, p.92-93Publication Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
Journal article2013, Microelectronic Engineering, 109, p.39-42Publication Statistical spectroscopy of switching traps in deeply scaled vertical poly-Si channel for 3D memories
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