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Browsing by Author "Tzviatkov, Plamen"

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    100-nm generation contact patterning by low temperature 193-nm resist reflow process

    Van Driessche, Veerle  
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    Lucas, Kevin
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    Van Roey, Frieda  
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    Grozev, Grozdan  
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    Tzviatkov, Plamen
    Proceedings paper
    2002, Advances in Resist Technology and Processing XIX, 4/03/2002, p.631-642
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    100nm generation contact patterning by low temperature 193nm resist reflow process

    Van Driessche, V.
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    Grozev, G.
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    Lucas, K.
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    Van Roey, Frieda  
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    Tzviatkov, Plamen
    Journal article
    2002, Semiconductor Fabtech, 16, p.?-?
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    248 nm lithography for the 0.18 μm generation

    Vandenberghe, Geert  
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    Tzviatkov, Plamen
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    Yen, Anthony
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    Ronse, Kurt  
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    Van den hove, Luc  
    Proceedings paper
    1996, Proceedings of the Microlithography Seminar INTERFACE'96, 27/10/1996, p.29-42
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    Evaluation of advanced I-line resists for practical 0.5*(l/NA) lithography

    Tzviatkov, Plamen
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    Pforr, Rainer
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    Jaenen, Patrick  
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    Vertommen, Johan
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    Van den hove, Luc  
    Proceedings paper
    1994, OCG Microlithography Seminar INTERFACE, 6/11/1994, p.105-124
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    Feasibility of 250 nm gate patterning using i-line with OPC

    Van Driessche, Veerle  
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    Finders, Jo
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    Tritchkov, Alexander
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    Ronse, Kurt  
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    Van den hove, Luc  
    Journal article
    1998, Microelectronic Engineering, 41/42, p.111-116
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    Impact of SEM accuracy on the CD control during gate patterning process of 0.25μm and sub-0.25μm generations

    Finders, Jo
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    Ronse, Kurt  
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    Van den hove, Luc  
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    Van Driessche, Veerle  
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    Tzviatkov, Plamen
    Proceedings paper
    1997, Proceedings Interface '97 Microlithography Symposium, p.17-30
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    Increasing DOF for VIA lithography using a non-CMP based architecture

    Grozev, Grozdan  
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    Waeterloos, Joost
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    Ronse, Kurt  
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    Van den hove, Luc  
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    Tzviatkov, Plamen
    Proceedings paper
    1997, Proceedings Interface '97 Microlithography Symposium;, p.249-257
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    Introducing 193 nm lithography

    Pollers, Ingrid
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    Jaenen, Patrick  
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    Van Roey, Frieda  
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    Goethals, Mieke
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    Ronse, Kurt  
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    Davies, G.
    Proceedings paper
    1998, Proceedings of the Microlithography Symposium. Interface '98, 15/11/1998, p.179-198
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    Lithographic performance of 193 nm single and bi-layer materials

    Goethals, Mieke
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    Pollers, Ingrid
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    Van Roey, Frieda  
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    Sugihara, Takashi
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    Ronse, Kurt  
    Journal article
    1998, Journal of Photopolymer Science and Technology, (11) 3, p.513-23
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    Low-temperature 193nm resist reflow process for 100 nm generation contact patterning

    Van Driessche, Veerle  
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    Lucas, Kevin
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    Van Roey, Frieda  
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    Grozev, Grozdan  
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    Tzviatkov, Plamen
    Proceedings paper
    2001, Lithography for Semiconductor Manufacturing II, 30/05/2001, p.396-407
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    Optical proximity correction for 0.3 μm i-line lithography

    Yen, Anthony
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    Tzviatkov, Plamen
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    Wong, Alfred
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    Juffermans, Casper
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    Jonckheere, Rik  
    Journal article
    1996, Microelectronic Engineering, 30, p.141-144
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    Optically enhanced i-line lithography for 0.3-μm random logic applications

    Yen, Anthony
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    Tzviatkov, Plamen
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    Grozev, Grozdan  
    Journal article
    1996, Solid State Technology, (39) March, p.S13-S19
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    Optimisation methodology towards a manufacturable 0.3 μm poly-gate process using i-line lithography

    Finders, Jo
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    Bruggeman, B.
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    Ronse, Kurt  
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    Van den hove, Luc  
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    Tzviatkov, Plamen
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    Dusa, M.
    Proceedings paper
    1996, Proceedings of the Microlithography Seminar INTERFACE, 27/10/1996, p.223-246
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    Optimizing i-line lithography for 0.3-μm poly-gate manufacturing

    Finders, Jo
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    Tzviatkov, Plamen
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    Ronse, Kurt  
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    Van den hove, Luc  
    Journal article
    1997, Solid State Technology, (40) March, p.S5-S14
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    SEM proximity effect for poly gate patterns

    Finders, Jo
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    Potoms, Goedele  
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    Ronse, Kurt  
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    Van den hove, Luc  
    ;
    Van Driessche, Veerle  
    Journal article
    1997, Microlithography World, (6) 4, p.5-10

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