Browsing by Author "Uedono, Akira"
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Publication Characterization of extreme Si thinning proces for wafer-to-wafer stacking
Proceedings paper2016, IEEE 66th Electronic Components and Technology Conference - ECTC, 31/05/2016, p.2095-2102Publication Characterization of porous low-k dielectric films by using positron annihilation
Meeting abstract2018, JAPAN-RUB Workshop on Plasma Science, 4/07/2018Publication Characterization of porous structures in advanced low-k films with thin TaN layers using monoenergetic positron beams
Journal article2013, Japanese Journal of Applied Physics, (52) 10, p.106501Publication Defect identification in bonding surface layer by positron annihilation spectroscopy
Proceedings paper2019, 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019), 21/05/2019Publication Detailed characterization of the effects of plasma treatments on an advanced 2.0 low-k material
Journal article2013, ECS Journal of Solid State Science and Technology, (2) 5, p.N103-N109Publication Exploring Bonding Mechanism of SiCN for Hybrid Bonding
Proceedings paper2024, IEEE 74th Electronic Components and Technology Conference (ECTC), MAY 28-31, 2024, p.1953-1957Publication Influence of Si wafer thinning processes on (Sub)surface defects
Journal article2017, Applied Surface Science, 404, p.82-87Publication Interfacial Conductivity Enhancement and Pore Confinement Conductivity-Lowering Behavior inside the Nanopores of Solid Silica-gel Nanocomposite Electrolytes
Journal article2021, ACS APPLIED MATERIALS & INTERFACES, (13) 34, p.40543-40551Publication Morphological characterization and mechanical behavior by dicing and thinning on direct bonded Si wafer
Journal article2020, Journal of Manufacturing Processes, 58, p.811-818Publication Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy
Journal article2020, Microporous and Mesoporous Materials, 295, p.109964Publication Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam
Journal article2016-12, Journal of Applied Physics, (120) 21, p.215702Publication Resolving nanoscale composition fluctuations and defects in advanced interconnects: a crucial step to comprehend thin film resistivity.
Proceedings paper2024, 2024 International Interconnect Technology Conference, JUN 03-06, 2024Publication Surface sealing using self-assembled monolayers and its effect on metal diffusion in porous low-k dielectrics studied using monoenergetic positron beams
Journal article2016, Applied Surface Science, 368, p.272-276Publication The influence of AlN nucleation layer on Radio Frequency (RF) transmission loss of GaN-on-Si structure
Meeting abstract2019, 13th International Conference on Nitride Semiconductors (ICNS-13), 7/07/2019, p.GP02.01Publication The influence of AlN nucleation layer on radio frequency transmission loss of AlN-on-Si hetero-structure
Journal article2020, Physica Status Solidi A, (217) 7, p.1900755Publication Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography
Journal article2024, ACS APPLIED ELECTRONIC MATERIALS, (6) 8, p.5894-5902