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Browsing by Author "Van Doorne, Patrick"

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    Alternative post-etch polymer removal in a single-wafer platform

    Dundas, C.
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    Vroom, R.
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    Ghekiere, John
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    Van Doorne, Patrick
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    Rink, I.
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    Sharp, I.
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    Heffernan, S.
    Proceedings paper
    2003, Ultra Clean Processing of Silicon Surfaces 2002 - UCPSS, 16/09/2002, p.247-251
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    Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence

    Vereecke, Guy  
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    Arnauts, Sophia  
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    Van Doorne, Patrick
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    Kenis, Karine  
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    Onsia, Bart  
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    Verstraeten, K.
    Journal article
    2001, Spectrochimica Acta B, 56, p.2321-2330
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    Damage-free removal of nano-sized particles, heading towards a red brick wall

    Mertens, Paul  
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    Fyen, Wim
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    Vereecke, Guy  
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    Xu, Kaidong
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    Lauerhaas, J.
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    Holsteyns, Frank  
    Oral presentation
    2003, International Sematech Wafer Cleaning and Surface Preparation Workshop
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    Developments in cleaning technology for critical layers

    Heyns, Marc  
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    Arnauts, Sophia  
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    Bearda, Twan
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    Claes, M.
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    Cornelissen, Ingrid  
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    De Gendt, Stefan  
    Oral presentation
    2000, Santa Clara Plastics Symposium on Cleaning Technology; May 2000
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    Effective post-etch residue removal on low-k films using single wafer processing

    Kesters, Els  
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    Ghekiere, John
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    Van Doorne, Patrick
    ;
    Vereecke, Guy  
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    Mertens, Paul  
    ;
    Heyns, Marc  
    Meeting abstract
    2003, 204th Meeting of the Electrochemical Society: 8th Int. Symp. on Cleaning Technology in Semiconductor Device Manufacturing, 13/10/2003
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    Effective post-etch residue removal on low-K films using single wafer processing

    Kesters, Els  
    ;
    Ghekiere, John
    ;
    Van Doorne, Patrick
    ;
    Vereecke, Guy  
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    Mertens, Paul  
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    Heyns, Marc  
    Proceedings paper
    2004, Cleaning Technology in Semiconductor Device Manufacturing VIII. Proceedings of the International Symposium, 13/10/2003, p.15-22
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    Etching and cleaning of HfO2 deposited on Si

    Snow, Jim
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    Kraus, Harald
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    Van Doorne, Patrick
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    Mertens, Paul  
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    Kovacs, Fredi
    Proceedings paper
    2002-11, The 1st International Surface Cleaning Workshop, 11/11/2002
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    Etching of HfO2, deposited on LPCVD Si3N4, and cleaning of Hf residues

    Kraus, Harald
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    Snow, Jim
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    Van Doorne, Patrick
    ;
    Mertens, Paul  
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    Kovacs, F.
    Oral presentation
    2003, Twelfth International Symposium on Semiconductor Manufacturing - ISSM
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    Integration of high-k gate dielectrics - wet etch, cleaning and surface conditioning

    De Gendt, Stefan  
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    Beckx, Stephan  
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    Caymax, Matty  
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    Claes, Martine  
    ;
    Conard, Thierry  
    Meeting abstract
    2003, 204th Meeting of the Electrochemical Society: 8th Int. Symp. on Cleaning Technology in Semiconductor Device Manufacturing, 13/10/2003
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    Integration of high-K gate dielectrics - wet etch, cleaning and surface conditioning

    De Gendt, Stefan  
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    Beckx, Stephan  
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    Caymax, Matty  
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    Claes, Martine  
    ;
    Conard, Thierry  
    Proceedings paper
    2004, Cleaning Technology in Semiconducting Device Manufacturing VIII. Proceedings of the International Symposium, 13/10/2003, p.67-77
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    Method for determining the effectiveness of silicon nitride as a barrier layer for HfO2

    Kraus, Harald
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    Snow, Jim
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    Van Doorne, Patrick
    ;
    Mertens, Paul  
    ;
    Kovacs, Frederic
    Meeting abstract
    2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 13/10/2003
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    Method for determining the effectiveness of silicon nitride as a barrier layer for HfO2

    Kraus, Harald
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    Snow, Jim
    ;
    Van Doorne, Patrick
    ;
    Fyen, Wim
    ;
    Mertens, Paul  
    ;
    Kovacs, Frederic
    Proceedings paper
    2004, Physics and Technology of High-k Gate Dielectrics II, 12/10/2003, p.47-57
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    Scaling of high-k dielectrics towards sub-1nm EOT

    Heyns, Marc  
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    Beckx, Stephan  
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    Bender, Hugo  
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    Blomme, Pieter  
    ;
    Boullart, Werner  
    ;
    Brijs, Bert
    Proceedings paper
    2003, IEEE International Symposium on VLSI Technology, Systems, and Applications, 23/04/2003, p.251-254

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