Browsing by Author "Van den bosch, G."
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Publication Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultra thin oxides
Proceedings paper2001, 39th Annual International Reliability Physics Symposium; 30 April - 3 May 2001; Orlando, FL, USA., p.386-392Publication Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics
Journal article2001, IEEE Trans. Device and Materials Reliability, (1) 2, p.120-127Publication Analysis and optimisation of the hot-carrier degradation performance of 0.35μm fully overlapped LDD devices
Proceedings paper1995, 33rd Annual IEEE International Reliability Physics Conference - IRPS, 4/05/1995, p.254-259Publication Characterization of hot-carrier aging of a 0.35µm fully overlapped-LDD CMOS technology
Proceedings paper1995, 20th International Conference on Microelectronics. Proceedings, 12/09/1995, p.197-202Publication Hot carrier degradation and time-dependent dielectric breakdown in oxides
Journal article1999, Microelectronic Engineering, (49) 1_2, p.27-40Publication Impact of plasma density and pattern aspect ratio on plasma damage in deep submicron CMOS technologies
Proceedings paper1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.164-167Publication Optimisation of a pre-metal-dielectric with a contact etch stop layer for 0.18μm and 0.13μm technologies
Proceedings paper2000, Proceedings of the 30th European Solid-State Device Research Conference - ESSDERC, 11/09/2000, p.260-263Publication Oxide and Interface Degradation Resulting from Substrate Hot-Hole Injection at 295K and 77K
Journal article1994, J. Appl. Phys., 75, p.2073-2080Publication Plasma charging damage issues in copper single and dual damascene, oxide and low-k dielectric interconnects
Proceedings paper2001, 6th International Symposium on Plasma Process-Induced Damage; May 14-15, 2001. Monterey, CA, USA., p.8-11Publication Study of the hot-carrier degradation performance of 0.35 μm fully overlapped LDD devices
Journal article1995, Microelectronic Engineering, 28, p.265-268