Browsing by Author "Vanderheyden, Annelies"
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Publication 15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Proceedings paper2014, Symposium on VLSI Technology, 9/06/2014, p.138-139Publication 1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
; ; ; ; Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.134-135Publication Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Meeting abstract2014, International Workshop on Nitride Semiconductors - IWN, 24/08/2014Publication Interplay between statistical variability and reliability in contemporary p-MOSFETs: measurements vs. simulated
Journal article2014, IEEE Transactions on Electron Devices, (61) 9, p.3265-3273Publication MOCVD growth of DH-HEMT buffers with low-temperature ALN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Meeting abstract2015, 11th International Conference on Nitride Semiconductors - ICNS-11, 30/08/2015, p.TuEO89Publication MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Journal article2016, Physica Status Solidi C, (13) 5_6, p.311-316Publication Reliability aware simulation flow: from TCAD calibration to circuit level analysis
Proceedings paper2015, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 9/09/2015, p.152-155Publication Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow
Publication TCAD-based methodology for reliability assessment of nanoscaled MOSFETs
Proceedings paper2015, 11th Conference on Ph.D. Research in Microelectronics and Electronics - PRIME, 29/06/2015, p.270-273