Browsing by Author "Vellianitis, Georgios"
- Results Per Page
- Sort Options
Publication Application of HCl etch in the production of novel devices
Meeting abstract2008, 213th ECS Meeting, 18/05/2008, p.647Publication Application of HCl gas phase etch in the production of novel devices
Proceedings paper2008-05, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS. 4: New Materials, Processes, and Equipment, 18/05/2008, p.329-335Publication Characteristics and integration challenges of FinFET-based devices for (Sub-)22nm technology nodes circuit applications
Proceedings paper2009-10, International Conference on Solid-State Devices and Materials - SSDM, 7/10/2009, p.1040-1041Publication Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride
Journal article2023, ACS APPLIED ELECTRONIC MATERIALS, (5) 2, p.858-864Publication Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
Publication First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.241-244Publication Gatestacks for scalable high-performance FinFETs
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.681-684Publication High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.829-832Publication Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.110-111Publication Material aspects and challenges for SOI FinFET integration
Meeting abstract2008, 213th ECS Meeting, 18/05/2008, p.636Publication Material aspects and challenges for SOI FinFET integration
Proceedings paper2008, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 4: New Materials, Processes, and Equipment, 18/05/2008, p.223-234Publication The influence of TiN thickness and SiO2 formation method on the structural and electrical properties of TiN/HfO2/SiO2 gate stacks
Journal article2009, IEEE Transactions on Electron Devices, (56) 7, p.1548-1553