Browsing by Author "Wu, Xiangyu"

Accurate determination of interlayer resistivity of 2-D layered systems: graphene case study

ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices

Boosting carrier mobility of synthetic few layer graphene on SiO2 by interlayer rotation and decoupling

Characterization of interface interactions between Graphene and Ruthenium

Circuit delay and power benchmark of graphene against Cu interconnects

Controlling water intercalation is key to a direct graphene transfer

Doping of graphene for the application in nano-interconnect

Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

Dual gate synthetic WS2 MOSFETs with 120 mu S/mu m Gm 2.7 mu F/cm(2) capacitance and ambipolar channel

Electrical characterization of multilayer graphene ribbons with Pd edge contacts for advanced interconnects

Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics

Enhancing interface doping in graphene-metal hybrid devices using H-2 plasma clean

Evaluation of multilayer graphene for advanced interconnects

Graphene interconnects – High performance twisted 20 nm graphene ribbons

Graphene nanoribbons for ultimate scaling of interconnects

High Density 360 /μm Aligned CNT FET with ION>1 mA/μm at -0.5 V VD and 30nm Lch

Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Influence of passivation layer on graphene properties for optoelectronic applications

Integration of GAA Monolayer MoS2 Nanosheet FETs with Gate First Process for Future 2D CFET Scaling

Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the D-IT(E) profile