Browsing by Author "Zimmerman, Paul"

Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor

Atomic layer deposition of HfO2 on (100) and (110) oriented silicon surfaces

Ge deep sub-micron HiK/MG pFET with superior drive compared to Si HiK/MG state-of-the-art reference

Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates

GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices

High-k gate stack engineering – towards meeting low standby power and high performance targets

High-performance deep submicron Ge pMOSFETs with halo implants

Integration challenges for multi-gate devices

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions

Novel, effective and cost-efficient method of introducing fluorine into metal/Hf-based gate stack in MuGFET and planar SOI devices with significant BTI improvement

Parasitic source/drain resistance reduction in N-channel SOI MuGFETs with 15nm wide fins

Silicon orientation effects in the atomic layer deposition of hafnium oxide

Synthesis of metal-teflon AF nanocomposites by solution-phase methods

Tall triple-gate device with TiN/HfO2 gate stack

The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal