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Browsing by Type "Journal article"

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Now showing 1 - 20 of 15626
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    0.18 μm KrF lithography using optical proximity correction based on empirical behavior modeling

    Tritchkov, Alexander
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    Stirnimann, J.
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    Gangala, Hareen K
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    Ronse, Kurt  
    Journal article
    1998, Journal of Vacuum Science and Technology B, (12) 6, p.3398-3404
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    0.18 μm lithography : using 248 nm deep-UV and top surface imaging

    Goethals, Mieke
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    Van den hove, Luc  
    Journal article
    1996, Semiconductor Fabtech, 4, p.169-173
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    0.35V time-domain-based instrumentation amplifier

    Mohan, Rachit
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    Yan, Long
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    Gielen, Georges  
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    Van Hoof, Chris  
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    Yazicioglu, Refet Firat
    Journal article
    2014, Electronics Letters, (50) 21, p.1511-1513
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    -1 V bias 67 GHz bandwidth si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

    Chen, Hongtao
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    Verheyen, Peter  
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    De Heyn, Peter  
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    Lepage, Guy  
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    De Coster, Jeroen  
    Journal article
    2016-03, Optics Express, (24) 5, p.4622-4631
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    1, 2, 3, Fork: Counter Mode Variants based on a Generalized Forkcipher

    Andreeva, Elena
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    Bhati, Amit Singh
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    Vizar, Damian
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    Preneel, Bart  
    Journal article
    2021, IACR TRANSACTIONS ON SYMMETRIC CRYPTOLOGY, (2021) 3, p.1-35
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    1-((2,4-dichlorophenethyl)amino)-3-phenoxypropan-2-ol kills Pseudomonas aeruginosa through extensive membrane damage

    Defraine, Valerie
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    Liebens, Veerle
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    Loos, Evelien
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    Swings, Toon
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    Weytjens, Bram
    Journal article
    2018, Frontiers in Microbiology, 9, p.129
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    1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

    Kumar, Sujit  
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    Geens, Karen  
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    Vohra, Anurag  
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    Wellekens, Dirk  
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    Cingu, Deepthi  
    ;
    Fabris, Elena  
    Journal article
    2024, IEEE ELECTRON DEVICE LETTERS, (45) 4, p.657-660
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    1.25 Gbit/s ITU-T G.984.2 burst-mode transimpedance amplifier without reset pins

    Ossieur, Peter  
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    De Ridder, Tine
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    Bauwelinck, Johan  
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    De Backer, Els
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    Gillis, Jan
    ;
    Qiu, Xing Zhi
    Journal article
    2007, Electronics Letters, (43) 18, p.991-992
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    1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

    Uvin, Sarah  
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    Kumari, Sulakshna  
    ;
    De Groote, Andreas
    ;
    Verstuyft, Steven  
    ;
    Lepage, Guy  
    Journal article
    2018-07, Optics Express, (26) 14, p.18302-18309
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    1.55-μm InP-InGaAsP Fabry-Perot lasers with integrated spot size converters using antiresonant reflecting optical waveguides

    Galarza, Marko
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    De Mesel, Kurt
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    Verstuyft, Steven  
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    Aramburu, C.
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    Moerman, Ingrid  
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    Van Daele, Peter  
    Journal article
    2002, IEEE Photonics Technology Letters, (14) 8, p.1043-1045
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    1.7-1.9 μm InxGa1-xAs/InyAl1-yAs light-emitting diodes lattice-mismatched grown on GaAs

    Murti, M. R.
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    Grietens, Bob
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    Van Hoof, Chris  
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    Borghs, Gustaaf  
    Journal article
    1995, J. Appl. Phys., (78) 1, p.578-80
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    1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

    Lee, Jae Woo
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    Cho, Moon Ju
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    Simoen, Eddy  
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    Ritzenthaler, Romain  
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    Togo, Mitsuhiro
    Journal article
    2013-03, Applied Physics Letters, (102) 7, p.73503
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    1/f Noise in drain and gate current of MOSFETs with high-k gate stacks

    Magnone, P.
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    Crupi, F.
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    Giusi, G.
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    Pace, C.
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    Simoen, Eddy  
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    Claeys, Cor
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    Pantisano, Luigi
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    Maji, D.
    Journal article
    2009, IEEE Transactions on Device and Materials Reliability, (9) 2, p.180-189
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    1/f Noise in rural and urban soundscapes

    De Coensel, Bert
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    Botteldooren, D.
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    De Muer, Tom
    Journal article
    2003, Acta Acustica united with Acustica, (89) 2, p.287-295
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    1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

    Beyne, Sofie  
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    Croes, Kristof  
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    De Wolf, Ingrid  
    ;
    Tokei, Zsolt  
    Journal article
    2016, Journal of Applied Physics, (119) 18, p.184302
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    1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

    Yan, L.
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    Simoen, Eddy  
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    Olsen, S.H.
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    Akheyar, Amal
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    Claeys, Cor
    ;
    O'Neill, A.G.
    Journal article
    2009, Solid-State Electronics, (53) 11, p.1177-1182
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    10 Gb/s burst-mode post-amplifier with automatic reset

    De Ridder, Tine
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    Ossieur, Peter  
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    Melange, Cedric
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    Baekelandt, Bart A.G.
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    Bauwelinck, Johan  
    Journal article
    2008-11, IET Electronics Letters, (44) 23, p.1371-1373
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    10 Gbit/s burst-mode limiting amplifier with switched time constants for fast settling and large CID tolerance

    Put, Jasmien
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    Yin, Xin  
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    Gillis, Jan
    ;
    Qiu, Xing Zhi
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    Bauwelinck, Johan  
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    Vandewege, Jan
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    Krimmel, H.-G.
    Journal article
    2011-08, Electronics Letters, (47) 17, p.970-972
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    10 GHz Optoelectronic Circuit With Variable Sigmoid Shaped Activation Function for Photonic Neural Networks

    Chrysostomidis, Themistoklis
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    Roumpos, Ioannis
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    Moralis-Pegios, Miltiadis
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    Lambrecht, Joris  
    Journal article
    2024, JOURNAL OF LIGHTWAVE TECHNOLOGY, (42) 22, p.7977-7988
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    10-/28-GB chirp managed 20-km links based on silicon photonics transceivers

    Abbasi, Amin
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    Moeneclaey, Bart  
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    Yin, Xin  
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    Bauwelinck, Johan  
    ;
    Roelkens, Gunther  
    ;
    Morthier, Geert  
    Journal article
    2017-08, IEEE Photonics Technology Letters, (29) 16, p.1324-1327
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