Browsing by author "Demeulemeester, Jelle"
Now showing items 1-18 of 18
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Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Sakai, A.; Zaima, Shigeaki (2010-10) -
Atom probe tomography analysis of SiGe fins embedded in SiO2: facts and artefacts
Melkonyan, Davit; Fleischmann, Claudia; Arnoldi, Laurent; Demeulemeester, Jelle; Kumar, Arul; Bogdanowicz, Janusz; Vurpillot, Francois; Vandervorst, Wilfried (2017) -
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2011) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2012) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Kumar, Arul; Demeulemeester, Jelle; Vantomme, Andre; Franquet, Alexis; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2012) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2013) -
Elemental redistribution of Pt and Pd in nickel silicides: a comparative study
Schrauwen, A.; Demeulemeester, Jelle; Kumar, Arul; De Schutter, B.; Vandervorst, Wilfried; Detavernier, C.M.; Comrie, C.M.; Temst, Kristiaan; Vantomme, Andre (2012) -
Experimental determination of the apex temperature of a semiconducting tip during laser-assisted atom probe tomography
Kumar, Arul; Demeulemeester, Jelle; Bogdanowicz, Janusz; Bran, Julien; Melkonyan, Davit (2014) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Sakai, A.; Nakatsuka, Osaku; Zaima, Shigeaki (2011) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010) -
Interplay between relaxation and defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography
Kumar, Arul; Demeulemeester, Jelle; Bogdanowicz, Janusz; Melkonyan, Davit; Wang, Wei; Loo, Roger; Vandervorst, Wilfried; Fleischmann, Claudia; Gencarelli, Federica; Shimura, Yosuke (2015) -
Mapping interfacial excess in atom probe data
Felfer, Peter; Scherrer, Barbara; Demeulemeester, Jelle; Vandervorst, Wilfried; Cairney, Julie M. (2015) -
Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010-10) -
Material assessment for uni-axial strained Ge pMOS -1: characterization of GeSn(B) materials
Vincent, Benjamin; Shimura, Yosuke; Takeuchi, Shotaro; Nishimura, Tsuyoshi; Demeulemeester, Jelle; Eneman, Geert; Clarysse, Trudo; Vandervorst, Wilfried; Vantomme, Andre; Nakatsuka, Osamu; Zaima, Shigeaki; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010) -
On the locally resonant absorption of light in semiconducting tips during laser-assisted Atom Probe Tomography
Bogdanowicz, Janusz; Koelling, Sebastian; Gilbert, Matthieu; Kumar, Arul; Demeulemeester, Jelle; Bran, Julien; Melkonyan, Davit; Vandervorst, Wilfried (2014) -
On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction
Schrauwen, Annelore; Demeulemeester, Jelle; Kumar, Arul; Vandervorst, Wilfried; Comrie, C; Temst, Kristiaan; Vantomme, Andre (2013) -
Quantification of group IV alloys in confined structures: the self focusing SIMS approach
Franquet, Alexis; Douhard, Bastien; Melkonyan, Davit; Delmotte, Joris; Demeulemeester, Jelle; Conard, Thierry; Vandervorst, Wilfried (2014) -
Surface chemistry of deposition processes for epitaxial Si-O superlattices
Delabie, Annelies; Jayachandran, Suseendran; Billen, Arne; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Bender, Hugo; Demeulemeester, Jelle; Vandervorst, Wilfried; Caymax, Matty; Heyns, Marc (2014)