Browsing by author "Rothschild, Aude"
Now showing items 1-20 of 79
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45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Mitsuhashi, Riichirou; Yamamoto, Kazuhiko; Hayashi, S.; Rothschild, Aude; Kubicek, Stefan; Veloso, Anabela; Van Elshocht, Sven; Jurczak, Gosia; De Gendt, Stefan; Biesemans, Serge; Niwa, M. (2005) -
A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states
Simoen, Eddy; Rothschild, Aude; Vermang, Bart; Poortmans, Jef; Mertens, Robert (2011) -
A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states
Simoen, Eddy; Rothschild, Aude; Vermang, Bart; Poortmans, Jef; Mertens, Robert (2011) -
Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Rothschild, Aude; Shi, Xiaoping; Everaert, Jean-Luc; Kerner, Christoph; Chiarella, Thomas; Hoffmann, Thomas; Vrancken, Christa; Shickova, Adelina; Yoshinao, H.; Mitsuhashi, Riichirou; Niwa, Masaaki; Lauwers, Anne; Veloso, Anabela; Kittl, Jorge; Absil, Philippe; Biesemans, Serge (2007) -
Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Shickova, Adelina; Kauerauf, Thomas; Rothschild, Aude; Aoulaiche, Marc; Sahhaf, Sahar; Kaczer, Ben; Veloso, Anabela; Torregiani, Cristina; Pantisano, Luigi; Lauwers, Anne; Zahid, Mohammed; Rost, Tim; Tigelaar, H.; Pas, M.; Fretwell, J.; McCormack, J.; Hoffmann, Thomas; Kerner, Christoph; Chiarella, Thomas; Brus, Stephan; Harada, Yoshinao; Niwa, Masaaki; Kaushik, Vidya; Maes, Herman; Absil, Philippe; Groeseneken, Guido; Biesemans, Serge; Kittl, Jorge (2007) -
Al2O3 surface passivation : electrical characterization using the Quantox tool
Rothschild, Aude; Nishibe, Nishibe; Cui, Jianli; Zhu, Nanchang; Debucquoy, Maarten; Mamagkakis, Stylianos; Nagaswami, Venkat; John, Joachim (2011) -
ALD Al2O3 for industrial Si solar cells: advanced cleaning and in-depth characterization
Vermang, Bart; Rothschild, Aude; Loozen, Xavier; Bearda, Twan; Cornagliotti, Emanuele; John, Joachim; Poortmans, Jef; Mertens, Robert (2010) -
ALD Al2O3 for surface passivation of silicon solar cells: impact of covering metal
Loozen, Xavier; O'Sullivan, Barry; Rothschild, Aude; Vermang, Bart; John, Joachim; Poortmans, Jef (2010) -
ALD-Al2O3 passivation for solar cells : high temperature stability
Rothschild, Aude; Penaud, Julien; Jaffrennou, Périne; Wostyn, Kurt; Vermang, Bart; John, Joachim; Poortmans, Jef (2011) -
ALD-Al2O3 passivation for solar cells: charge investigation
Rothschild, Aude; Vermang, Bart; Loozen, Xavier; O'Sullivan, Barry; John, Joachim; Poortmans, Jef (2010) -
Atomic layer deposition of Al2O3 as rear surface passivation for p-type Si passivated emitter and rear cells: an overview
Vermang, Bart; Goverde, Hans; Cornagliotti, Emanuele; Prajapati, Victor; Simoen, Eddy; Morato, Alessandro; Tous, Loic; Uruena De Castro, Angel; Choulat, Patrick; Rothschild, Aude; John, Joachim; Poortmans, Jef; Mertens, Robert (2012) -
Atomic layer deposition of Al2O3 for industrial local Al back-surface field (BSF) solar cells
Rothschild, Aude; Vermang, Bart; Goverde, Hans (2011) -
Band edge work function metal gates using PEALD TaCN electrodes
Maes, Jan; Swerts, Johan; Pierreux, Dieter; Machkaoutsan, Vladimir; Marcus, Steven; Milligan, Brennan; Schram, Tom; Ragnarsson, Lars-Ake; Cacciato, Antonio; Rohr, Erika; Rothschild, Aude; Hendrickx, Paul; Breuil, Laurent; Van den Bosch, Geert (2009) -
Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells
Vermang, Bart; Goverde, Hans; Uruena De Castro, Angel; Lorenz, Anne; Cornagliotti, Emanuele; Rothschild, Aude; John, Joachim; Poortmans, Jef; Mertens, Robert (2012) -
Challenges in scaling of CMOS devices towards 65nm node
Jurczak, Gosia; Veloso, Anabela; Rooyackers, Rita; Augendre, Emmanuel; Mertens, Sofie; Rothschild, Aude; Schaekers, Marc; Lindsay, Richard; Lauwers, Anne; Henson, Kirklen; Severi, Simone; Pollentier, Ivan; De Keersgieter, An (2003-06) -
Characterization of high-throughput spatial ALD Al2O3 as surface passivation for industrial local Al BSF Si solar cells
Vermang, Bart; Goverde, Hans; Rothschild, Aude; John, Joachim; Poortmans, Jef; Mertens, Robert; Vermont, P.; Vanormelingen, Koen; Granneman, E.H.A. (2011) -
Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
Lauwers, Anne; Veloso, Anabela; Chang, Shou-Zen; Yu, HongYu; Hoffmann, Thomas Y.; Kerner, Christoph; Demand, Marc; Rothschild, Aude; Niwa, Masaaki; Satoru, Ito; Mitshashi, Riichirou; Ameen, Mike; Whittemore, Graham; Pawlak, Malgorzata; Vrancken, Christa; Demeurisse, Caroline; Mertens, Sofie; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Kittl, Jorge (2008) -
Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application
Niwa, Masaaki; Mitsuhashi, Riichirou; Yamamoto, K.; Hayashi, S.; Harada, Yoshinao; Rothschild, Aude; Hoffmann, Thomas Y.; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; Biesemans, Serge; Kubota, M. (2005-10) -
Effect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cells
Cacciato, Antonio; Breuil, Laurent; Van den Bosch, Geert; Richard, Olivier; Rothschild, Aude; Furnemont, Arnaud; Bender, Hugo; Kittl, Jorge; Van Houdt, Jan (2008) -
Evolutionary process development towards next generation crystalline silicon solar cells: A semiconductor process toolbox application
John, Joachim; Prajapati, Victor; Vermang, Bart; Lorenz, Joachim; Allebe, Christophe; Rothschild, Aude; Tous, Loic; Uruena De Castro, Angel; Baert, Kris; Poortmans, Jef (2011)