Browsing by author "Sahhaf, Sahar"
Now showing items 1-16 of 16
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A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling
Roussel, Philippe; Degraeve, Robin; Sahhaf, Sahar; Groeseneken, Guido (2007) -
A new TDDB reliability prediction methodology accounting for multiple SBD and wear out
Sahhaf, Sahar; Degraeve, Robin; Roussel, Philippe; Kaczer, Ben; Kauerauf, Thomas; Groeseneken, Guido (2009) -
Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Shickova, Adelina; Kauerauf, Thomas; Rothschild, Aude; Aoulaiche, Marc; Sahhaf, Sahar; Kaczer, Ben; Veloso, Anabela; Torregiani, Cristina; Pantisano, Luigi; Lauwers, Anne; Zahid, Mohammed; Rost, Tim; Tigelaar, H.; Pas, M.; Fretwell, J.; McCormack, J.; Hoffmann, Thomas; Kerner, Christoph; Chiarella, Thomas; Brus, Stephan; Harada, Yoshinao; Niwa, Masaaki; Kaushik, Vidya; Maes, Herman; Absil, Philippe; Groeseneken, Guido; Biesemans, Serge; Kittl, Jorge (2007) -
Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density
Sahhaf, Sahar; Degraeve, Robin; Srividya, Vidya; Kaczer, Ben; Gealy, Dan; Horiguchi, Naoto; Togo, Mitsuhiro; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)
Sahhaf, Sahar; Degraeve, Robin; Cho, Moon Ju; De Brabanter, K.; Roussel, Philippe; Zahid, Mohammed; Groeseneken, Guido (2010-12) -
Electrical defects in high-k / metal gate MOS transistors
Sahhaf, Sahar (2010-10) -
Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures
Sahhaf, Sahar; Degraeve, Robin; O'Connor, Robert; Kaczer, Ben; Zahid, Mohammed; Roussel, Philippe; Pantisano, Luigi; Groeseneken, Guido (2009) -
HfSiO bulk trap density controls the initial Vth in nMOSFETs
Sahhaf, Sahar; Degraeve, Robin; Srividya, Vydia; De Brabanter, K.; Schram, Tom; Gilbert, Matthieu; Vandervorst, Wilfried; Groeseneken, Guido (2012-06) -
Impact of the hard breakdown detection method on the extraction of the Wearout distribution parameters
Sahhaf, Sahar; Degraeve, Robin; Roussel, Philippe; Kaczer, Ben; Kauerauf, Thomas; Groeseneken, Guido (2007) -
Interpretation of PBTI/ TDDB predicted lifetime based on trap characterization by TSCIS in Vth-adjusted transistors
Sahhaf, Sahar; Degraeve, Robin; Srividya, Vidya; Cho, Moon Ju; Kauerauf, Thomas; Groeseneken, Guido (2010) -
Ion-implantation-based low-cost Hk/MG process for CMOS low-power application
Ortolland, Claude; Sahhaf, Sahar; Srividya, Vidya; Degraeve, Robin; Saino, Kanta; Kim, Chul-Sung; Gilbert, Matthieu; Kauerauf, Thomas; Cho, Moon Ju; Dehan, Morin; Schram, Tom; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Biesemans, Serge; Absil, Philippe; Vandervorst, Wilfried; Gealy, Dan; Hoffmann, Thomas Y. (2010) -
Methodologies for sub-1nm EOT TDDB evaluatiion
Kauerauf, Thomas; Degraeve, Robin; Ragnarsson, Lars-Ake; Roussel, Philippe; Sahhaf, Sahar; Groeseneken, Guido; O'Connor, Robert (2011) -
Nonparametric comparison of densities based on statistical bootstrap
De Brabanter, K.; Sahhaf, Sahar; Karsmakers, S.; De Brabanter, J.; Suykens, J.A.K.; De Moor, B. (2010) -
Profiling different kind of generated defects at elevated temperatures in both SiO2 and high-k dielectrics
Sahhaf, Sahar; Degraeve, Robin; Zahid, Mohammed; Groeseneken, Guido (2010) -
Review of reliability issues in high k/metal gate stacks
Degraeve, Robin; Aoulaiche, Marc; Kaczer, Ben; Roussel, Philippe; Kauerauf, Thomas; Sahhaf, Sahar; Groeseneken, Guido (2008) -
TDDB reliability prediction based on the statistical analysis of hard break-down including multiple soft breakdown and wear out
Sahhaf, Sahar; Degraeve, Robin; Roussel, Philippe; Kauerauf, Thomas; Kaczer, Ben; Groeseneken, Guido (2007)