Browsing by author "Steegen, An"
Now showing items 1-20 of 40
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Analog designer's playground beyond 20nm, is it Circuit Physics or Auto Place&Route?
Van der Plas, Geert; Wambacq, Piet; Verkest, Diederik; Steegen, An (2013) -
BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities
Groeseneken, Guido; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Kauerauf, Thomas; Alian, AliReza; Mitard, Jerome; Arimura, Hiroaki; Lin, Dennis; Waldron, Niamh; Sioncke, Sonja; Witters, Liesbeth; Mertens, Hans; Ragnarsson, Lars-Ake; Heyns, Marc; Collaert, Nadine; Thean, Aaron; Steegen, An (2014-12) -
Challenges of continued scaling
Steegen, An (2011) -
Characterisation of the local stress in CoSi2 silicided shallow trench isolation structures
Stuer, Cindy; Steegen, An; Bender, Hugo; Van Landuyt, J.; Maex, Karen (2001) -
Characterization of the local mechanical stress induced during the Ti and Co/Ti salicidation in sub-0.25μm technologies
Steegen, An; De Wolf, Ingrid; Maex, Karen (1999) -
Control and impact of processing ambient during rapid thermal silicidation
Maex, Karen; Kondoh, Eiichi; Lauwers, Anne; Steegen, An; de Potter de ten Broeck, Muriel; Besser, Paul; Proost, Joris (1998) -
Design technology co-optimization for N10
Ryckaert, Julien; Raghavan, Praveen; Baert, Rogier; Garcia Bardon, Marie; Dusa, Mircea; Mallik, Arindam; Sakhare, Sushil; Vandewalle, Boris; Wambacq, Piet; Chava, Bharani; Croes, Kris; Dehan, Morin; Jang, Doyoung; Leray, Philippe; Liu, Tsung-Te; Miyaguchi, Kenichi; Parvais, Bertrand; Schuddinck, Pieter; Weemaes, Philippe; Mercha, Abdelkarim; Boemmels, Juergen; Horiguchi, Naoto; McIntyre, Greg; Thean, Aaron; Tokei, Zsolt; Cheng, Shaunee; Verkest, Diederik; Steegen, An (2014) -
Dual-channel technology with Cap-free single metal gate for high performance CMOS in gate-first and gate-last integration
Witters, Liesbeth; Mitard, Jerome; Veloso, Anabela; Hikavyy, Andriy; Franco, Jacopo; Kauerauf, Thomas; Cho, Moon Ju; Schram, Tom; Sebaai, Farid; Yamaguchi, Shinpei; Takeoka, S.; Fukuda, Masahiro; Wang, Wei-E; Duriez, Blandine; Eneman, Geert; Loo, Roger; Kellens, Kristof; Tielens, Hilde; Favia, Paola; Rohr, Erika; Hellings, Geert; Bender, Hugo; Roussel, Philippe; Crabbe, Yvo; Brus, Stephan; Mannaert, Geert; Kubicek, Stefan; Devriendt, Katia; De Meyer, Kristin; Ragnarsson, Lars-Ake; Steegen, An; Horiguchi, Naoto (2011) -
Electrical performance and scalability of Ni-monosilicide towards sub 0.13 μm technologies
Lauwers, A.; de Potter de ten Broeck, Muriel; Lindsay, Richard; Steegen, An; Roelandts, Nico; Lossen, F.; Vrancken, Christa; Maex, Karen (2001) -
Extreme scaling enabled by 5 tracks cells : holistic design-device co-optimization for FinFETs and lateral nanowires
Garcia Bardon, Marie; Sherazi, Yasser; Schuddinck, Pieter; Jang, Doyoung; Yakimets, Dmitry; Debacker, Peter; Baert, Rogier; Mertens, Hans; Badaroglu, Mustafa; Mocuta, Anda; Horiguchi, Naoto; Mocuta, Dan; Raghavan, Praveen; Ryckaert, Julien; Verkest, Diederik; Steegen, An (2016) -
Finite element simulations of the mechanical stress in and around TiSi2 lines
Steegen, An; De Wolf, Ingrid; Maex, Karen; Ignat, M. (1998) -
Group IV channels for 7nm FinFETs: Performance for SoCs power and speed metrics
Garcia Bardon, Marie; Raghavan, Praveen; Eneman, Geert; Schuddinck, Pieter; Dehan, Morin; Mercha, Abdelkarim; Thean, Aaron; Verkest, Diederik; Steegen, An (2014) -
Heterogeneous nano- to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics
Thean, Aaron; Collaert, Nadine; Radu, Iuliana; Waldron, Niamh; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Mitard, Jerome; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Veloso, Anabela; Yakimets, Dmitry; Huynh Bao, Trong; Chiappe, Daniele; Vaysset, Adrien; Zografos, Odysseas; Caymax, Matty; Huyghebaert, Cedric; Barla, Kathy; Steegen, An (2015) -
High performance Si.45Ge.55 implant free quantum well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation
Yamaguchi, Shinpei; Witters, Liesbeth; Mitard, Jerome; Eneman, Geert; Hellings, Geert; Fukuda, Masahiro; Hikavyy, Andriy; Loo, Roger; Veloso, Anabela; Crabbe, Yvo; Rohr, Erika; Favia, Paola; Bender, Hugo; Takeoka, S.; Vellianitis, Georgios; Wang, Wei-E; Ragnarsson, Lars-Ake; De Meyer, Kristin; Steegen, An; Horiguchi, Naoto (2011) -
Holisitic device exploration for 7nm node
Raghavan, Praveen; Garcia Bardon, Marie; Jang, Doyoung; Schuddinck, Pieter; Yakimets, Dmitry; Ryckaert, Julien; Mercha, Abdelkarim; Horiguchi, Naoto; Collaert, Nadine; Mocuta, Anda; Mocuta, Dan; Tokei, Zsolt; Verkest, Diederik; Thean, Aaron; Steegen, An (2015) -
Impact of Fin height variations on SRAM yield
Dobrovolny, Petr; Zuber, Paul; Miranda Corbalan, Miguel; Garcia Bardon, Marie; Chiarella, Thomas; Buchegger, Peter; Mercha, Abdelkarim; Verkest, Diederik; Steegen, An; Horiguchi, Naoto (2012-04) -
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines
Teodorescu, V.; Nistor, Leona; Bender, Hugo; Steegen, An; Lauwers, A.; Maex, Karen; Van Landuyt, J. (2001) -
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates
Ghica, C.; Nistor, Leona; Bender, Hugo; Steegen, An; Lauwers, A.; Maex, Karen; Van Landuyt, J. (2001) -
Influence of the As and BF2 junction implantation on the stress induced defects during the Ti- and Co/Ti-silicidation
Steegen, An; Bender, Hugo; De Wolf, Ingrid; Maex, Karen (1999)