Browsing by author "Favia, Paola"
Now showing items 1-20 of 186
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0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Menou, Nicolas; Wang, Xin Peng; Kaczer, Ben; Polspoel, Wouter; Popovici, Mihaela Ioana; Opsomer, Karl; Pawlak, Malgorzata; Knaepen, W.; Detavernier, C.; Blomberg, T.; Pierreux, D.; Swerts, Johan; Maes, Jan; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2008) -
15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
3D characterization of nanowire devices with STEM based modes
Bender, Hugo; Bosch, Eric G.T.; Richard, Olivier; Mendez, David; Favia, Paola; Lazic, Ivan (2019) -
A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs
Mitard, Jerome; Witters, Liesbeth; Sasaki, Yuichiro; Arimura, Hiroaki; Schulze, Andreas; Loo, Roger; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Cott, Daire; Chiarella, Thomas; Kubicek, Stefan; Mertens, Hans; Ritzenthaler, Romain; Vrancken, Christa; Favia, Paola; Bender, Hugo; Horiguchi, Naoto; Barla, Kathy; Mocuta, Dan; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016-06) -
A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach
Popovici, Mihaela Ioana; Tomida, Kazuyuki; Swerts, Johan; Favia, Paola; Delabie, Annelies; Bender, Hugo; Adelmann, Christoph; Tielens, Hilde; Brijs, Bert; Kaczer, Ben; Pawlak, Malgorzata; Kim, Min-Soo; Altimime, Laith; Van Elshocht, Sven; Kittl, Jorge (2011) -
A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash
Ramesh, Siva; Banerjee, Kaustuv; Opsomer, Karl; Rachita, Iuliana; Bastos, Joao; Soulie, Jean-Philippe; Sebaai, Farid; Favia, Paola; Korytov, Maxim; Richard, Olivier; Breuil, Laurent; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2022) -
Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-D-IT Si-cap-free Gate Stack and Optimizing the Channel Strain
Arimura, Hiroaki; Capogreco, Elena; Wostyn, Kurt; Eneman, Geert; Ragnarsson, Lars-Ake; Brus, Stephan; Baudot, Sylvain; Peter, Antony; Schram, Tom; Favia, Paola; Richard, Olivier; Bender, Hugo; Mitard, Jerome; Horiguchi, Naoto (2020) -
Advanced Raman spectroscopy using nanofocusing of light
Nuytten, Thomas; Bogdanowicz, Janusz; Hantschel, Thomas; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2017) -
Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET
Arimura, Hiroaki; Eneman, Geert; Capogreco, Elena; Witters, Liesbeth; De Keersgieter, An; Favia, Paola; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Bender, Hugo; Ragnarsson, Lars-Ake; Mitard, Jerome; Collaert, Nadine; Mocuta, Dan; Horiguchi, Naoto (2018) -
ALD strontium titanates and their characterization
Popovici, Mihaela Ioana; Van Elshocht, Sven; Tomida, Kazuyuki; Menou, Nicolas; Swerts, Johan; Pawlak, Malgorzata; Kaczer, Ben; Kim, Min-Soo; Brijs, Bert; Favia, Paola; Conard, Thierry; Franquet, Alexis; Moussa, Alain; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010) -
AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2007) -
AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Derluyn, Joff; Sijmus, Bram; Favia, Paola; Richard, Olivier; Bender, Hugo; Germain, Marianne; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012) -
Anisotropic biaxial stress measurements in finFET channels through nano-focused raman spectroscopy
Nuytten, Thomas; Jamal, Muhammad Tahir; Hantschel, Thomas; Bogdanowicz, Janusz; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2016) -
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Nuytten, Thomas; Bogdanowicz, Janusz; Witters, Liesbeth; Eneman, Geert; Hantschel, Thomas; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2018) -
Apparent size effects on dopant activation in nanometer-wide Si fins
Folkersma, Steven; Bogdanowicz, Janusz; Favia, Paola; Wouters, Lennaert; Petersen, Dirch Hjorth; Hansen, Ole; Henrichsen, Henrik Hartmann; Nielsen, Peter Former; Shiv, Lior; Vandervorst, Wilfried (2021) -
Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors
Hikavyy, Andriy; Kubicek, Stefan; Chew, Soon Aik; Boccardi, Guillaume; Favia, Paola; Eneman, Geert; Loo, Roger (2013) -
Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors
Hikavyy, Andriy; Chew, Soon Aik; Boccardi, Guillaume; Favia, Paola; Loo, Roger (2013) -
Application of selective epitaxial growth in the sub 20 nm FinFET device fabrication
Hikavyy, Andriy; Rosseel, Erik; Eneman, Geert; Favia, Paola; Loo, Roger (2014)