Browsing by author "Maes, Jan Willem"
Now showing items 1-9 of 9
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Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan Willem; Loo, Roger (2014-10) -
Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes
Menou, Nicolas; Popovici, Mihaela Ioana; Clima, Sergiu; Opsomer, Karl; Polspoel, Wouter; Kaczer, Ben; Rampelberg, Geert; Tomida, Kazuyuki; Pawlak, Malgorzata; Detavernier, Christophe; Pierreux, Dieter; Swerts, Johan; Maes, Jan Willem; Manger, Dirk; Badylevich, M; Afanasiev, Valeri; Conard, Thierry; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Pourtois, Geoffrey; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2009) -
Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
Chang, Vincent; Ragnarsson, Lars-Ake; Yu, HongYu; Aoulaiche, Marc; Conard, Thierry; Yin, KaiMin; Schram, Tom; Maes, Jan Willem; De Gendt, Stefan; Biesemans, Serge (2007) -
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Kaczer, Ben; Xie, Qi; Maes, Jan Willem; Tang, Fu; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2020) -
Growth and layer characterization of SrTiO3 by atomic layer deposition using Sr(tBu3Cp)2 and Ti(OMe)4
Popovici, Mihaela Ioana; Van Elshocht, Sven; Menou, Nicolas; Swerts, Johan; Pierreux, Dieter; Delabie, Annelies; Opsomer, Karl; Brijs, Bert; Faelens, Gerrit; Franquet, Alexis; Conard, Thierry; Maes, Jan Willem; Wouters, Dirk; Kittl, Jorge Adrian (2009) -
Impact of precursors in the atomic layer deposition of high-k dielectrics on semiconductor substrates
Delabie, Annelies; Nyns, Laura; Popovici, Mihaela Ioana; Caymax, Matty; Van Elshocht, Sven; Brunco, David; Swerts, Johan; Maes, Jan Willem; Kim, Eunji; McIntyre, Paul (2008) -
New mechanisms for ozone-based ALD growth of high-k dielectrics via nitrogen-oxygen species
Jung, Sung-Hoon; Raisanen, Petri; Givens, Michael; Shero, Eric; Delabie, Annelies; Swerts, Johan; Van Elshocht, Sven; Maes, Jan Willem (2010) -
Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector
Haider, Ali; Deng, Shaoren; Devulder, Wouter; Maes, Jan Willem; Girard, Jean-Marc; Khalil El Hajjam, Gabriel; Kar, Gouri Sankar; Opsomer, Karl; Detavernier, Christophe; Givens, Michael; Goux, Ludovic; Van Elshocht, Sven; Delhougne, Romain; Delabie, Annelies; Caymax, Matty; Swerts, Johan; Khalil (2021) -
Scatterometry and AFM measurement combination for area selective deposition process characterization
Saib, Mohamed; Moussa, Alain; Charley, Anne-Laure; Leray, Philippe; Hung, Joey; Koret, Roy; Turovets, Igor; Ger, Avron; Deng, Shaoren; Illiberi, Andrea; Maes, Jan Willem; Woodworth, Gabriel; Strauss, Michael (2019)