Browsing by author "Guo, Weiming"

650 V p-GaN gate power HEMTs on 200 mm engineered substrates

Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019)

An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014)

An ultra-short InP nanowire laser monolithic integrated on (001) silicon substrate

Wang, Zhechao; Tian, Bin; Paladugu, Mohan; Pantouvaki, Marianna; Merckling, Clement; Guo, Weiming; Dekoster, Johan; Caymax, Matty; Van Campenhout, Joris; Absil, Philippe; Van Thourhout, Dries (2013)

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

Guo, Weiming; Mols, Yves; Belz, Jürgen; Beyer, Andreas; Volz, Kerstin; Schulze, Andreas; Langer, Robert; Kunert, Bernardette (2017)

Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI

Li, Xiangdong; Zhao, Ming; Bakeroot, Benoit; Geens, Karen; Guo, Weiming; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Groeseneken, Guido; Decoutere, Stefaan (2019)

Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si

Favia, Paola; Richard, Olivier; Geypen, Jef; Waldron, Niamh; Merckling, Clement; Guo, Weiming; Caymax, Matty; Bender, Hugo (2013)

Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study

Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Pourtois, Geoffrey; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty (2014)

Direct three-dimensional observation of the conduction in poly-Si and In1-xGaxAs 3D NAND vertical channels

Celano, Umberto; Capogreco, Elena; Lisoni, Judit; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Van den Bosch, Geert; Van Houdt, Jan; De Meyer, Kristin; Furnemont, Arnaud; Vandervorst, Wilfried (2016)

Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices

Guo, Weiming; Geens, Karen; Zhao, Ming; Behmenburg, Hannes; Fahle, Dirk; Odnoblyudov, Vlad; Basceri, Cem; Aktas, Ozgur; Decoutere, Stefaan (2018)

Epitaxial III-V/Si devices for silicon photonics

Van Thourhout, Dries; Shi, Yuting; Tian, Bin; Wang, Zhechao; Pantouvaki, Marianna; Merckling, Clement; Kunert, Bernardette; Guo, Weiming; Van Campenhout, Joris (2017)

Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS

Caymax, Matty; Merckling, Clement; Wang, Gang; Orzali, Tommaso; Guo, Weiming; Vandervorst, Wilfried; Dekoster, Johan; Waldron, Niamh; Thean, Aaron (2012)

Evolution of (001) and (111) facets for selective epitaxial growth inside Submicron trenches

Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014)

Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory

Capogreco, Elena; Subirats, Alexandre; Lisoni, Judit Gloria; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Tan, Chi Lim; Delhougne, Romain; Van den Bosch, Geert; De Meyer, Kristin; Furnemont, Arnaud; Van Houdt, Jan (2017)

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty; Pourtois, Geoffrey (2014)

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Caymax, Matty; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Pourtois, Geoffrey (2014)

GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion

Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019)

Growth rate for the SEG of III-V compounds inside submicron STI trenches on Si (001) substrates by MOVPE: modeling and experiments

Jiang, Sijia; Merckling, Clement; Guo, Weiming; Waldron, Niamh; Caymax, Matty; Vandervorst, Wilfried; Seefeldt, Marc; Heyns, Marc (2014)

Heteroepitaxy of III-V compound semiconductors on Si for logic applications: selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Cantoro, Mirco; Merckling, Clement; Jiang, Sijia; Guo, Weiming; Waldron, Niamh; Bender, Hugo; Moussa, Alain; Douhard, Bastien; Vandervorst, Wilfried; Heyns, Marc; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012)

Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers

Cantoro, Mirco; Merckling, Clement; Jiang, Sijia; Guo, Weiming; Waldron, Niamh; Bender, Hugo; Dekoster, Johan; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty; Heyns, Marc (2012)

Heteroepitaxy of InP on Si(001) in sub-50nm width trenches by Selective-Area Metalorganic Vapor-Phase Epitaxy: the role of the nucleation layer and the recess engineering

Merckling, Clement; Waldron, Niamh; Jiang, Sijia; Guo, Weiming; Collaert, Nadine; Caymax, Matty; Vancoille, Eric; Barla, Kathy; Thean, Aaron; Heyns, Marc; Vandervorst, Wilfried (2014-01)