Browsing by author "Defranoux, C."
Now showing items 1-13 of 13
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Accurate electrical activation characterization of CMOS ultra-shallow profiles
Clarysse, Trudo; Dortu, Fabian; Vanhaeren, Danielle; Hoflijk, Ilse; Geenen, Luc; Janssens, Tom; Loo, Roger; Vandervorst, Wilfried; Pawlak, Bartek; Ouzeaud, V.; Defranoux, C.; Faifer, V.N.; Current, M.I. (2004) -
Characterization of high-k dielectrics by combined spectroscopic ellipsometry (SE) and x-ray reflectometry (XRR)
Sun, L.; Defranoux, C.; Stehlé, J.L.; Boher, P.; Evrard, P.; Bellandi, E.; Bender, Hugo (2004) -
High-k dielectric characterization by combined VUV spectroscopic ellipsometry and X-ray reflectometry
Boher, P.; Evrard, P.; Defranoux, C.; Darragon, A.; Sun, Lianchao; Fouere, J.C.; Stehlé, J.L.; Bellandi, E.; Bender, Hugo (2003-12) -
High-k dielectric characterization by VUV spectroscopic ellipsometry and X-ray reflection
Boher, P.; Evrard, P.; Defranoux, C.; Fouere, J.C.; Bellandi, E.; Bender, Hugo (2003) -
Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition
Houssiau, L.; Vitchev, R.G.; Pireaux, J.J.; Conard, Thierry; Bender, Hugo; Richard, Olivier; Mack, P.; Wolstenholme, J.; Defranoux, C. (2003) -
On the activation mechanisms of sub-melt laser anneals
Clarysse, Trudo; Bogdanowicz, Janusz; Goossens, Jozefien; Moussa, Alain; Rosseel, Erik; Vandervorst, Wilfried; Petersen, D.H.; Lin, R.; Nielsen, P.F.; Hansen, O.; Defranoux, C.; Vertikov, A.; Gostein, M.; Bennett, N.S.; Cowern, N.E.B.; Faifer, V.N. (2008) -
Physical characterization of mixed HfAlOx layers by complementary analysis techniques
Bender, Hugo; Conard, Thierry; Richard, Olivier; Brijs, Bert; Petry, Jasmine; Vandervorst, Wilfried; Defranoux, C.; Boher, P.; Rochat, N.; Wyon, C.; Mack, P.; Wolstenholme, J.; Vitchev, E.; Houssiau, L.; Pireaux, J-J.; Bergmaier, A.; Dollinger, G. (2004) -
Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques
Bender, Hugo; Conard, Thierry; Richard, Olivier; Brijs, Bert; Petry, Jasmine; Vandervorst, Wilfried; Defranoux, C.; Boher, P.; Rochat, N.; Wyon, C.; Mack, P.; Wolstenholme, J.; Vitchev, R.; Houssiau, L.; Pireaux, J.J.; Bergmaier, A.; Dollinger, G. (2003) -
Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectrics
Boher, P.; Defranoux, C.; Bourtault, S.; Piel, J.P.; Bender, Hugo (2003) -
Vacuum UV spectroscopic ellipsometry applied to the characterization of high-k dielectrics
Boher, P.; Defranoux, C.; Heinrich, P.; Wolstenholme, J.; Bender, Hugo (2003) -
Vacuum UV spectroscopic ellipsometry applied to the characterization of high-k gate dielectrics
Boher, P.; Defranoux, C.; Bender, Hugo (2003) -
VUV spectroscopic ellipsometry applied to the characterization of high-k dielectrics
Boher, P.; Defranoux, C.; Heinrich, P.; Wolstenholme, J.; Bender, Hugo (2004) -
X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface
Vitchev, R.G.; Pireaux, J.J.; Conard, Thierry; Bender, Hugo; Wolstenholme, J.; Defranoux, C. (2004)