Browsing by author "Schrimpf, Ronald"
Now showing items 1-11 of 11
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Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
Jiang, Rong; Zhang, En Xia; Liao, Wenjun; Liang, Chundong; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Linten, Dimitri; Mitard, Jerome; Collaert, Nadine; Sioncke, Sonja; Waldron, Niamh (2018) -
Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs
Duan, Guo Xing; Hachtel, Jordan; Zhang, En Xia; Zhang, Cher Xuan; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Mitard, Jerome; Linten, Dimitri; Witters, Liesbeth; Collaert, Nadine; Mocuta, Anda; Chisholm, Matthew; Pantelides, Sokrates (2016) -
Electrical effect of a single extended defect in MOSFETs: a simulation study
Ni, Kai; Eneman, Geert; Simoen, Eddy; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Schrimpf, Ronald; Reed, Robert; Fleetwood, Daniel (2016) -
Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Zhao, Simeng; jiang, Rong; Wang, Pang; Zhang, En Xia; Waldron, Niamh; Kunert, Bernadette; Mitard, Jerome; Collaert, Nadine; Soncke, Sonja; Linten, Dimitri; Schrimpf, Ronald; Reed, Robert; Fleetwood, Daniel (2018-09) -
Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
Li, Kan; Zhang, Enxia; Gorchichko, Mariia; Wang, Pengfei; Hiblot, Gaspard; Jourdain, Anne; Van Huylenbroeck, Stefaan; Reed, Robert; Fleetwood, Daniel; Schrimpf, Ronald (2020) -
Interface and border traps in Ge pMOSFETs
Fleetwood, Daniel; Simoen, Eddy; Francis, Sarah; Zhang, C.X.; Arora, R.; Zhang, E.X.; Schrimpf, Ronald; Galloway, Ken; Mitard, Jerome; Claeys, Cor (2012) -
Low-frequency Noise and Defects in Copper and Ruthenium Resistors
Fleetwood, Dan; Beyne, Sofie; jiang, Rong; Zhao, S. E.; Whang, P.; Bonaldo, S.; McCurdy, M. W.; Tokei, Zsolt; De Wolf, Ingrid; Croes, Kristof; Zhang, E. X.; Alles, M. S.; Schrimpf, Ronald; Reed, Robert; Linten, Dimitri (2019) -
On the assessment of electrically active defects in high-mobility materials and devices
Simoen, Eddy; Eneman, Geert; Oliveira, Alberto V.; Ni, Kai; Mitard, Jerome; Witters, Liesbeth; Agopian, Paula G D; Martino, Joao Antonio; Fleetwood, Dan; Schrimpf, Ronald; Reed, Robert; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
Single-event induced charge collection in Ge-channel pMos FinFETs
Rony, M.W.; Samsel, Isaak; Zhang, En Xia; Sternberg, Andrew; Li, Kan; Reaz, Mahumed; Austin, Stephanie; Reed, Robert; Fleetwood, Robert; Alles, Mike; Linten, Dimitri; Mitard, Jerome; Schrimpf, Ronald (2020-07) -
Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si
Mitard, Jerome; Zhang, En Xia; Fleetwood, Daniel; Hachtel, Jordan; Liang, Chundong; Reed, Robert; Alles, Michael; Schrimpf, Ronald; Linten, Dimitri; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Chisholm, Matthew; Pantelides, Sokrates (2016-07) -
Total ionizing dose effects on ultra thin buried oxide floating body memories
Mahatme, Nihaar; Schrimpf, Ronald; Reed, Robert; Bhuva, B.L.; Griffoni, Alessio; Simoen, Eddy; Aoulaiche, Marc; Linten, Dimitri; Jurczak, Gosia; Groeseneken, Guido (2012-04)