Browsing by author "Shimamoto, Yasuhiro"

Now showing items 1-9 of 9

    • Effects of interactions between HfO2 and poly-Si on MOSCAP and MESFET electrical behaviour 

      Kaushik, Vidya; Röhr, Erika; De Gendt, Stefan; Delabie, Annelies; Van Elshocht, Sven; Claes, Martine; Shimamoto, Yasuhiro; Ragnarsson, Lars-Ake; Witters, Thomas; Manabe, Y.; Heyns, Marc (2003)

    • Implementation of high-k gate dielectrics - a status update 

      De Gendt, Stefan; Chen, Jerry; Carter, Richard; Cartier, Eduard; Caymax, Matty; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Maes, Jan; Niwa, M.; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Röhr, Erika; Van Elshocht, Sven; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2003)

    • Mobility reduction due to remote charge scattering in Al2O3/SiO2 gate-stacked MISFETs 

      Saito, Shin-ichi; Shimamoto, Yasuhiro; Torii, Kazuyoshi; Manabe, Yukiko; Caymax, Matty; Maes, Jan; Hiratani, Masahiko; Kimura, Shin-ichiro (2002)

    • Scalability of MOCVD-deposited Hafnium oxide 

      Van Elshocht, Sven; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; Date, Lucien; De Gendt, Stefan; Kaushik, Vidya; Kerber, Andreas; Kluth, J.; Lujan, Guilherme; Petry, Jasmine; Pique, Didier; Richard, Olivier; Rohr, Erika; Shimamoto, Yasuhiro; Tsai, Wilman; Heyns, Marc (2003)

    • Scaling of Hf-based gate dielectrics - integration with polysilicon gates 

      De Gendt, Stefan; Caymax, Matty; Chen, Jerry; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Niwa, Masaaki; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Röhr, Erika; Van Elshocht, Sven; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2003)

    • Scaling of HF-based gate dielectrics - intgeration with polysilicon gates 

      De Gendt, Stefan; Caymax, Matty; Chen, J.; Claes, Martine; Conard, Thierry; Delabie, Annelies; Deweerd, Wim; Kaushik, Vidya; Kerber, Andreas; Kubicek, Stefan; Niwa, M.; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Schram, Tom; Shimamoto, Yasuhiro; Tsai, Wilman; Rohr, Erika; Van Elshocht, Sven; Vandervorst, Wilfried; Witters, Thomas; Young, Edward; Zhao, Chao; Heyns, Marc (2004)

    • Scaling of high-k dielectrics towards sub-1nm EOT 

      Heyns, Marc; Beckx, Stephan; Bender, Hugo; Blomme, Pieter; Boullart, Werner; Brijs, Bert; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Henson, Kirklen; Kauerauf, Thomas; Kubicek, Stefan; Lucci, Luca; Lujan, Guilherme; Mentens, Jimmy; Pantisano, Luigi; Petry, Jasmine; Richard, Olivier; Röhr, Erika; Schram, Tom; Vandervorst, Wilfried; Van Doorne, Patrick; Van Elshocht, Sven; Westlinder, Jörgen; Witters, Thomas; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Green, Martin; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, Steven; Tsai, Wilman; Young, Edward; Manabe, Yukiko; Shimamoto, Yasuhiro; Bajolet, Philippe; De Witte, Hilde; Maes, Jan; Date, Lucien; Pique, Didier; Coenegrachts, Bart; Vertommen, Johan; Passefort, Sophie (2003)

    • The impact of sub monolayers of HfO2 on the device performance of high-k transistors 

      Ragnarsson, Lars-Ake; Pantisano, Luigi; Kaushik, Vidya; Saito, S.I.; Shimamoto, Yasuhiro; De Gendt, Stefan; Heyns, Marc (2003-12)

    • The mechanism of mobility degradation in misfets with Al2O3 gate dielectric 

      Torii, K.; Shimamoto, Yasuhiro; Saito, S.; Tonomura, O.; Hiratani, M.; Manabe, Yukiko; Caymax, Matty; Maes, Jan (2002)