Browsing by author "Takeuchi, Shotaro"

200mm Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by CVD

Park, Si-Young; Anisha, R.; Berger, Paul; Loo, Roger; Nguyen, Duy; Takeuchi, Shotaro; Caymax, Matty (2009)

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Sakai, A.; Zaima, Shigeaki (2010-10)

Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling

Takeuchi, Shotaro; Yang, Lijun; Nguyen, Duy; Loo, Roger; Conard, Thierry; Pourtois, Geoffrey; Vandervorst, Wilfried; Caymax, Matty (2008)

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2011)

Conformal doping of FINFET's: a fabrication and metrology challenge

Vandervorst, Wilfried; Eyben, Pierre; Mody, Jay; Jurczak, Gosia; Nguyen, Duy; Takeuchi, Shotaro; Leys, Frederik; Loo, Roger; Caymax, Matty; Everaert, Jean-Luc (2008)

Conformal ultra shallow junctions by vapor phase doping with boron

Nguyen, Duy; Leys, Frederik; Takeuchi, Shotaro; Loo, Roger; Caymax, Matty; Eyben, Pierre; Vandervorst, Wilfried (2008-05)

Defect control for Ge/Si and Ge1-xSnx/Ge/Si heterostructures

Sakai, Akira; Takeuchi, Shotaro; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki (2007)

Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(001) substrates

Shinoda, Tatsuya; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Zaima, Shigeaki (2012)

Epitaxial Ge on standard STI patterned Si wafers: high quality virtual substrates for Ge pMOS and III/V nMOS

Loo, Roger; Wang, Gang; Souriau, Laurent; Lin, Vic; Takeuchi, Shotaro; Brammertz, Guy; Caymax, Matty (2009)

Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition

Leys, Frederik; Liu, Cong; Shi, Xiaoping; Lamare, B.; Takeuchi, Shotaro; Schaekers, Marc; Loo, Roger; Woelk, E.; Caymax, Matty (2008)

Evaluation of DiMethylAminoGermaniumTriChloride as a novel carbon-dopant and germanium precursor for germanium and silicon germanium chemical vapor deposition

Leys, Frederik; Liu, Cong; Shi, Xiaoping; Lamare, B.; Takeuchi, Shotaro; Schaekers, Marc; Loo, Roger; Woelk, E.; Caymax, Matty (2008)

Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

Wang, Gang; Loo, Roger; Souriau, Laurent; Takeuchi, Shotaro; De Jaeger, Brice; Lee, W; Caymax, Matty; Lin, Vic; Vandervorst, Wilfried; Blanpain, Bart; Heyns, Marc (2009)

Fabrication of high qualtiy Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

Wang, Gang; Loo, Roger; Takeuchi, Shotaro; Souriau, Laurent; Lin, Vic; Moussa, Alain; Bender, Hugo; De Jaeger, Brice; Ong, Patrick; Lee, Willie; Meuris, Marc; Caymax, Matty; Vandervorst, Wilfried; Blanpain, Bart; Heyns, Marc (2010)