Browsing by author "Fang, Wen"
Now showing items 1-15 of 15
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Distinction between silicon and oxide traps using single-trap spectroscopy
Fang, Wen; Simoen, Eddy; Aoulaiche, Marc; Luo, Jun; Zhao, Chao; Claeys, Cor (2014) -
Impact of gate stack dielectric on intrinsic voltage gain and low frequency noise in Ge pMOSFETs
Oliveira, A.V.; Agopian, P.G.D.; Martino, J.A.; Fang, Wen; Arimura, Hiroaki; Mitard, Jerome; Mertens, Hans; Simoen, Eddy; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2015) -
Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs
Fang, Wen; Veloso, Anabela; Simoen, Eddy; Cho, Moon Ju; Collaert, Nadine; Thean, Aaron; Luo, Jun; Zhao, Chao; Ye, T.; Claeys, Cor (2016) -
Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI
Simoen, Eddy; Claeys, Cor; Fang, Wen; Luo, Jun; Zhao, Chao (2015) -
Low frequency noise characterization of GeOx passivated Germanium MOSFETs
Fang, Wen; Simoen, Eddy; Arimura, Hiroaki; Mitard, Jerome; Sioncke, Sonja; Mertens, Hans; Mocuta, Anda; Collaert, Nadine; Luo, Jun; Zhao, Chao; Thean, Aaron; Claeys, Cor (2015) -
Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform
Claeys, Cor; Agopian, Paula; Alian, AliReza; Arimura, Hiroaki; Fang, Wen; Martino, Joao; Mitard, Jerome; Neves, Felipe; Oliveira, Alberto; Simoen, Eddy (2016) -
Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices
Simoen, Eddy; Cretu, Bogdan; Fang, Wen; Aoulaiche, Marc; Routoure, Jean-Marc; Carin, Regis; Luo, Jun; Zhao, Chao; Claeys, Cor (2016) -
Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack
Fang, Wen; Simoen, Eddy; Arimura, Hiroaki; Mitard, Jerome; Thean, Aaron; Luo, Jun; Zhao, Chao; Claeys, Cor (2015) -
Random telegraph noise: the key to single defect studies in nano-devices
Simoen, Eddy; Fang, Wen; Aoulaiche, Marc; Luo, Jun; Zhao, Chao; Claeys, Cor (2016) -
Random telegraph signal noise in advanced high performance and memory devices
Claeys, Cor; de Andrade, Gloria; Chai, Zheng; Fang, Wen; Govoreanu, Bogdan; Kaczer, Ben; Zhang, Wei; Simoen, Eddy (2016) -
Study of DID/ID of a single charge trap in UTBOX silicon films
Fang, Wen; Simoen, Eddy; Aoulaiche, Marc; Luo, Jun; Zhao, Chao; Claeys, Cor (2014) -
Study of random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
Li, Chi-Kang; Fang, Wen; Simoen, Eddy; Aoulaiche, Marc; Wu, Yuh-Renn; Luo, Jun; Zhao, Chao; Claeys, Cor (2014) -
The assessment of border traps in high-mobility channel materials
Simoen, Eddy; Alian, AliReza; Arimura, Hiroaki; Lin, Dennis; Mertens, Hans; Mitard, Jerome; Sioncke, Sonja; Fang, Wen; Luo, Jun; Zhao, Chao; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2015) -
Towards single-trap spectroscopy: Generation-recombination noise in UTBOX SOI nMOSFETs
Simoen, Eddy; Cretu, Bogdan; Fang, Wen; Aoulaiche, Marc; Routoure, Jean-Marc; Carin, Regis; Dos Santos, Sara; Luo, Jun; Zhao, Chao; Martino, Joao; Claeys, Cor (2014) -
Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs
Simoen, Eddy; Cretu, Bogdan; Fang, Wen; Aoulaiche, Marc; Routoure, Jean-Marc; Carin, Regis; dos Santos, Sara; Luo, Jun; Zhao, Chao; Martino, Joao Martino; Claeys, Cor (2015)