Browsing by author "Martens, Koen"

1/f noise in fully integrated electrolytically gated FinFETs with fin width down to 20nm

Martens, Koen; Du Bois, Bert; Van Roy, Wim; Severi, Simone; Siew, Yong Kong; Gupta, Anshul; Dupuy, Emmanuel; Radisic, Dunja; Altamirano Sanchez, Efrain; Simoen, Eddy (2019)

50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection

Santermans, Sybren; Barge, David; Hellings, Geert; Bergfeld Mori, Carlos; Migacz, Konrad Joseph; Rip, Jens; Spampinato, Valentina; Vos, Rita; Du Bois, Bert; Ray Chaudhuri, Ashesh; Martino, J. A.; Heyns, Marc; Severi, Simone; Van Roy, Wim; Martens, Koen (2020)

A fast and accurate method to study the impact of interface traps on germanium MOS performance

Hellings, Geert; Eneman, Geert; Mitard, Jerome; Martens, Koen; Wang, Wei-E; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2011)

A large scale systematic study of graphene/metal contact resistance using cTLM

Politou, Maria; Liu, Enlong; Asselberghs, Inge; Lee, ChangSeung; Martens, Koen; Radu, Iuliana; Tokei, Zsolt; Huyghebaert, Cedric; De Gendt, Stefan; Heyns, Marc (2014)

A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET

Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017)

A step towards a better understanding of silicon passivated (100) Ge p-channel

Pourtois, Geoffrey; Houssa, Michel; De Jaeger, Brice; Leys, Frederik; Kaczer, Ben; Martens, Koen; Caymax, Matty; Meuris, Marc; Groeseneken, Guido; Heyns, Marc (2007)

Admittance characterization and interface trap property extraction for Ge/III-V MOS structures

Martens, Koen (2011)

An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices

Vais, Abhitosh; Martens, Koen; Lin, Dennis; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016)

Applicability of charge pumping on Germanium MOSFETs

Martens, Koen; Kaczer, Ben; Grasser, Tibor; De Jaeger, Brice; Meuris, Marc; Maes, Herman; Groeseneken, Guido (2008)

Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor

Eneman, Geert; Delabie, Annelies; Van Elshocht, Sven; De Jaeger, Brice; Nicholas, Gareth; Martens, Koen; Brunco, David; Zimmerman, Paul; Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; Leys, Frederik; Winderickx, Gillis; Huyghebaert, Cedric; Terzieva, Valentina; Loo, Roger; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007)

Atomic layer deposition of vanadium oxides: process and application review

Prasadam, Vasu Prasad; Bahlawane, Naoufal; Mattelaer, Felix; Rampelberg, Geert; Detavernier, Christophe; Fang, Libin; Jiang, Yinzhu; Martens, Koen; Parkin, Ivan; Papakonstantinou, Ioannis (2019)

Band alignment and effective work function of atomiclayer deposited VO2 and V2O5 films on SiO2 and Al2O3

Cerbu, Florin; Chou, H.S.; Radu, Iuliana; Martens, Koen; Peter, Antony; Afanasev, Valeri; Stesmans, Andre (2015)

Band-to-band tunneling MOSCAPs for rapid TFET characterization

Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014)

BioFET technology: aggressively scaled pMOS FinFET as biosensor

Martens, Koen; Santermans, Sybren; Gupta, Mihir; Hellings, Geert; Wuytens, Robin; Du Bois, Bert; Dupuy, Emmanuel; Altamirano Sanchez, Efrain; Jans, Karolien; Vos, Rita; Stakenborg, Tim; Lagae, Liesbet; Heyns, Marc; Severi, Simone; Van Roy, Wim (2019)

BioFETs and Nanopore FETs: Nanoscale Silicon Field-Effect Transistors for Single-Molecule Sensing

Martens, Koen; Barge, David; Liu, Lijun; Santermans, Sybren; Delport, Jaco; Willems, Kherim; Gevers, Juliette; Du Bois, Bert; Andrei, Alexandru; Lagae, Liesbet; Verhulst, Anne; Ray Chaudhuri, Ashesh; Severi, Simone; Marion, Sanjin; Van Dorpe, Pol (2023-05-31)

BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; Cho, Moon Ju; Grasser, Tibor; Mitard, Jerome; Arimura, Hiroaki; Witters, Liesbeth; Cott, Daire; Waldron, Niamh; Zhou, Daisy; Vais, Abhitosh; Lin, Dennis; Alian, AliReza; Pourghaderi, Mohammad Ali; Martens, Koen; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Heyns, Marc; Groeseneken, Guido (2014)